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  • High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts
Title: High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts
Award ID(s):
1935676
PAR ID:
10396678
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
ACS Applied Electronic Materials
Volume:
3
Issue:
9
ISSN:
2637-6113
Page Range / eLocation ID:
4126 to 4134
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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