More Like this

1. High p-conductivity in AlGaN enabled by polarization field engineering

   https://doi.org/10.1063/5.0143427  

   Rathkanthiwar, Shashwat; Reddy, Pramod; Moody, Baxter; Quiñones-García, Cristyan; Bagheri, Pegah; Khachariya, Dolar; Dalmau, Rafael; Mita, Seiji; Kirste, Ronny; Collazo, Ramón; et al (April 2023, Applied Physics Letters)

   High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depended strongly on the compositional gradient and to some degree on the Mg doping level. A model is proposed to explain the role of the polarization field in enhancing the conductivity in Mg-doped graded AlGaN films and the transition between the two conduction types. This study offers a viable path to technologically useful p-conductivity in AlGaN. 

   more » « less
2. p-Type molecular doping by charge transfer in halide perovskite

   https://doi.org/10.1039/d1ma00160d  

   Euvrard, Julie; Gunawan, Oki; Zhong, Xinjue; Harvey, Steven P.; Kahn, Antoine; Mitzi, David B. (January 2021, Materials Advances)

   null (Ed.)

   Electronic technologies critically rely on the ability to broadly dope the active semiconductor; yet the promising class of halide perovskite semiconductors so far does not allow for significant control over carrier type (p- or n-) and density. The molecular doping approach offers important opportunities for generating free carriers through charge transfer. In this work, we demonstrate effective p-doping of MAPb 0.5 Sn 0.5 I 3 films using the molecular dopant F4TCNQ as a grain boundary coating, offering a conductivity and hole density tuning range of up to five orders of magnitude, associated with a 190 meV Fermi level down-shift. While charge transfer between MAPb 0.5 Sn 0.5 I 3 and F4TCNQ appears efficient, dopant ionization decreases with increasing Pb content, highlighting the need for appropriate energy offset between host and dopant molecule. Finally, we show that electrical p-doping impacts the perovskite optoelectronic properties, with a hole recombination lifetime increase of over one order of magnitude, suggesting passivation of deep traps. 

   more » « less
3. Selection by prediction with conformal p-values

   Ying, Jinl; Candès, Emmanuel (April 2023, Journal of machine learning research)
4. Displacement of P-Stereogenic Phosphiranes from Rhodium by CO in Hydroformylation Catalysis

   https://doi.org/10.1021/acs.organomet.3c00505  

   Tipker, Ryan M; Hughes, Russell P; Glueck, David S; Spinney, Heather A; Brammer, Michael A; Rheingold, Arnold L (February 2024, Organometallics)
5. Nitrogen–phosphorous interactions in young northern hardwoods indicate P limitation: foliar concentrations and resorption in a factorial N by P addition experiment

   https://doi.org/10.1007/s00442-019-04350-y  

   Gonzales, Kara; Yanai, Ruth (March 2019, Oecologia)