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Title: 10 kV GaN Power Diodes and Transistors with Performance beyond SiC Limit
Medium-voltage (MV) power electronic devices are widely used in renewable energy processing, electric grids, pulse power systems, etc. Current MV devices are mainly made of Si and SiC. This paper presents our recent efforts in developing a new generation of MV devices based on the multi-channel AlGaN/GaN platform and many new device designs involving charge balance, fin, and Cascode. The specific on-resistance of our 10 kV-class GaN Schottky barrier diodes and normally-OFF transistors is ~40 mΩ•cm 2 , rendering a Baliga’s figure of merit exceeding the 1-D unipolar SiC limits. We show the great promise of GaN in medium and high-voltage power applications.  more » « less
Award ID(s):
2036740
PAR ID:
10396725
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
10 kV GaN Power Diodes and Transistors with Performance beyond SiC Limit
Page Range / eLocation ID:
113 to 115
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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