This paper presents the study and evaluation of a medium-voltage grid-tied cascaded H-bridge (CHB) three-phase inverter for battery energy storage systems using SiC devices as an enabling technology. The high breakdown voltage capability of SiC devices provide the advantage to significantly minimize the complexity of the CHB multilevel converter, with less power loss compared to when Silicon (Si) devices are used. The topology in this study has been selected based on high voltage SiC devices. In order to reach 13.8 kV, a nine-level CHB is needed when using 6.5 kV SiC MOSFETs. However, if 10 kV SiC MOSFETs are used, only five-levels of the CHB are required. The controls were developed, simulated and verified through an experimental prototype. The results from the scaled-down prototype proved the controls and the verification of the performance of five-level CHB three-phase inverter. For the system reliability, both open-loop and short-circuit faults are analyzed.
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Evaluation of 1.2 kV SiC MOSFETs in Modular Multilevel Cascaded H-Bridge Three-Phase Inverter for Medium Voltage Grid Applications
This paper describes a study evaluating 1.2 kV SiC MOSFETs in modular multilevel cascaded H-bridge (CHB) threephase inverter for medium voltage ac grid applications. The main purpose of this topology is to remove the need of a bulk 60 Hz transformer that is normally used to step up the output signal of a voltage source inverter to the medium voltage level. Using SiC devices (1.2 kV ~ 6.5 kV SiC MOSFETs), with their high breakdown voltage, enables the system to meet and withstand the medium voltage stress, with a minimized number of cascaded modules. The SiC-based power electronics, when used in the presented topology, they significantly reduce the complexity usually faced when Si devices are used to meet the medium voltage level and the power scalability. The simulation and preliminary experimental results, on a low-voltage prototype, verifies the ninelevel CHB topology that is presented in this paper.
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- Award ID(s):
- 1747757
- PAR ID:
- 10084323
- Date Published:
- Journal Name:
- 2018 WiPDA Asia
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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