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This content will become publicly available on October 30, 2023

Title: Optimizing Write Voltages for Independent, Equal-Rate Pages in Flash Memory
This paper uses a mutual-information maximization paradigm to optimize the voltage levels written to cells in a Flash memory. To enable low-latency, each page of Flash memory stores only one coded bit in each Flash memory cell. For example, three-level cell (TL) Flash has three bit channels, one for each of three pages, that together determine which of eight voltage levels are written to each cell. Each Flash page is required to store the same number of data bits, but the various bits stored in the cell typically do not have to provide the same mutual information. A modified version of dynamic-assignment Blahut- Arimoto (DAB) moves the constellation points and adjusts the probability mass function for each bit channel to increase the mutual information of a worst bit channel with the goal of each bit channel providing the same mutual information. The resulting constellation provides essentially the same mutual information to each page while negligibly reducing the mutual information of the overall constellation. The optimized constellations feature points that are neither equally spaced nor equally likely. However, mod- ern shaping techniques such as probabilistic amplitude shaping can provide coded modulations that support such constellations.
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2022 56th Asilomar Conference on Signals, Systems, and Computers
Sponsoring Org:
National Science Foundation
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