Rasel, Md Abu, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, and Pearton, Stephen. Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors. Retrieved from https://par.nsf.gov/biblio/10399313. physica status solidi (RRL) – Rapid Research Letters 16.8 Web. doi:10.1002/pssr.202200171.

Rasel, Md Abu, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, & Pearton, Stephen. Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors. physica status solidi (RRL) – Rapid Research Letters, 16 (8). Retrieved from https://par.nsf.gov/biblio/10399313. https://doi.org/10.1002/pssr.202200171

Rasel, Md Abu, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, and Pearton, Stephen. "Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors". physica status solidi (RRL) – Rapid Research Letters 16 (8). Country unknown/Code not available. https://doi.org/10.1002/pssr.202200171. https://par.nsf.gov/biblio/10399313.

@article{osti_10399313,
place = {Country unknown/Code not available}, title = {Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors}, url = {https://par.nsf.gov/biblio/10399313}, DOI = {10.1002/pssr.202200171}, abstractNote = {}, journal = {physica status solidi (RRL) – Rapid Research Letters}, volume = {16}, number = {8}, author = {Rasel, Md Abu and Stepanoff, Sergei and Haque, Aman and Wolfe, Douglas E. and Ren, Fan and Pearton, Stephen}, }