Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors
- Award ID(s):
- 2015795
- NSF-PAR ID:
- 10399313
- Date Published:
- Journal Name:
- physica status solidi (RRL) – Rapid Research Letters
- Volume:
- 16
- Issue:
- 8
- ISSN:
- 1862-6254
- Page Range / eLocation ID:
- 2200171
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found