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Abstract In astronomical environments, the high-temperature emission of plasma mainly depends on ion charge states, requiring accurate analysis of the ionization and recombination processes. For various phenomena involving energetic particles, non-Maxwellian distributions of electrons exhibiting high-energy tails can significantly enhance the ionization process. Therefore, accurately computing ionization and recombination rates with non-Maxwellian electron distributions is essential for emission diagnostic analysis. In this work, we report two methods for fitting various non-Maxwellian distributions by using the Maxwellian decomposition strategy. For standardκ-distributions, the calculated ionization and recombination rate coefficients show comparable accuracy to other public packages. Additionally, our methods support arbitrary electron distributions and can be easily extended to updated atomic databases. We apply the above methods to two specific non-Maxwellian distribution scenarios: (i) accelerated electron distributions due to magnetic reconnection revealed in a combined MHD–particle simulation; and (ii) the high-energy truncatedκ-distribution predicted by the exospheric model of the solar wind. During the electron acceleration process, we show that the ionization rates of high-temperature iron ions increase significantly compared to their initial Maxwellian distribution, while the recombination rates may decrease due to the electron distribution changes in low-energy ranges. This can potentially lead to an overestimation of the plasma temperature when analyzing the Fe emission lines under the Maxwellian distribution assumption. For the truncatedκ-distribution in the solar wind, our results show that the ionization rates are lower than those for the standardκ-distribution, while the recombination rates remain similar. This leads to an overestimation of the plasma temperature when assuming aκ-distribution.
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Tuning electrical properties in Ga2O3 polymorphs induced with ion beams
Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is an interesting alternative to conventional deposition techniques. However, the adjustability of the electrical properties in such films is unexplored. In this work, we investigated two strategies for tuning the electron concentration in the ion beam created metastable κ-polymorph: adding silicon donors by ion implantation and adding hydrogen via plasma treatments. Importantly, all heat treatments were limited to ≤600 °C, set by the thermal stability of the ion beam fabricated polymorph. Under these conditions, silicon doping did not change the high resistive state caused by the iron acceptors in the initial wafer and residual defects accumulated upon the implants. Conversely, treating samples in a hydrogen plasma converted the ion beam fabricated κ-polymorph to n-type, with a net donor density in the low 1012 cm−3 range and dominating deep traps near 0.6 eV below the conduction band. The mechanism explaining this n-type conductivity change may be due to hydrogen forming shallow donor complexes with gallium vacancies and/or possibly passivating a fraction of the iron acceptors responsible for the high resistivity in the initial wafers.
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- Award ID(s):
- 1856662
- PAR ID:
- 10399904
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 133
- Issue:
- 9
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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