skip to main content


Title: Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes
With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.  more » « less
Award ID(s):
1736093
NSF-PAR ID:
10338700
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Nanomaterials
Volume:
11
Issue:
7
ISSN:
2079-4991
Page Range / eLocation ID:
1765
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Diamond-based sensors have shown great potential in the past few years due to their unique physicochemical properties. We report on the development of high-performance nitrogen-doped ultrananocrystalline diamond (UNCD) nanowire-based methane (CH4) gas sensors, taking advantage of a large surface-to-volume ratio and a small active area offered by the 1D nanowire geometry. The morphologic surface and crystalline structures of UNCD are also characterized by using scanning electron microscopy (SEM) and Raman scattering, respectively. By using synthesized nanowire arrays combined with 4-pin electrical electrodes, prototypic highly sensitive CH4 gas sensors have been designed, fabricated and tested. Various parameters including the sensitivity, response and recovery times, and thermal effect on the performance of the gas sensor have also been investigated in order to quantitate the sensing ability. Enhanced by the small grain size and porosity of the nanowire structure, fabricated nanowire UNCD sensors demonstrated a high sensitivity to CH4 gas at room temperature down to 2 ppm, as well as fast response and recovery times which are almost 10 times faster than that of regular nanodiamond thin film based sensors. 
    more » « less
  2. We report studies of multifunctional, nanostructured diamond composites that were fabricated using chemical vapor deposition (CVD) techniques. Grain sizes from micrometer, to submicron, nano, and ultrananocrystalline diamond (UNCD) were controlled by varying CH4, hydrogen, and argon gas concentrations during the syntheses. Scanning electron microscopy (SEM) and Raman scattering spectroscopy were used to investigate the morphologies, composites, and crystallinities of the films. Four multifunctional sensor prototypes were designed, fabricated, and tested, based on the four diamond materials of different grain sizes. The responses of the four prototypes to either pollution gas or UV light illumination were systematically investigated at different operating temperatures. Experimental data indicated the obtained UNCD composite from the low-cost simple CVD fabrication technique appeared to have very good sensitivities when exposed to low concentrations of H2 or NH3 gas with a decent response and fast recovery time. Furthermore, highly induced photocurrents from both microdiamond- and UNCD-based prototypes to deep UV illumination were also demonstrated, with responsivities up to 2750 mA/W and 550 mA/W at 250 nm wavelength, respectively. Overall, the fabricated UNCD prototypes displayed a good balance in performance for multifunctional sensor applications in terms of responsivity, stability, and repeatability.

     
    more » « less
  3. Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is an interesting alternative to conventional deposition techniques. However, the adjustability of the electrical properties in such films is unexplored. In this work, we investigated two strategies for tuning the electron concentration in the ion beam created metastable κ-polymorph: adding silicon donors by ion implantation and adding hydrogen via plasma treatments. Importantly, all heat treatments were limited to ≤600 °C, set by the thermal stability of the ion beam fabricated polymorph. Under these conditions, silicon doping did not change the high resistive state caused by the iron acceptors in the initial wafer and residual defects accumulated upon the implants. Conversely, treating samples in a hydrogen plasma converted the ion beam fabricated κ-polymorph to n-type, with a net donor density in the low 1012 cm−3 range and dominating deep traps near 0.6 eV below the conduction band. The mechanism explaining this n-type conductivity change may be due to hydrogen forming shallow donor complexes with gallium vacancies and/or possibly passivating a fraction of the iron acceptors responsible for the high resistivity in the initial wafers.

     
    more » « less
  4. Magnetotransport and ferromagnetism in thin films of Co2Si nanoclusters are investigated experimentally and theoretically. The nanoclusters are fabricated by an inert-gas condensation-type cluster-deposition method and have an average size of 11.3 nm. Unlike the bulk Co2Si that exhibits a very weak net magnetic moment only below 10 K, the nanoclusters exhibit room-temperature ferromagnetism with a substantial saturation magnetization. Key features of the system are its closeness to the Stoner transition, magnetic moments induced by spin polarization starting from surface atoms, and nonuniaxial anisotropy associated with the orthorhombic crystal structure of Co2Si. A method is introduced to determine the effective anisotropy using the experimental magnetization data of this complex system and its relationship with the two lowest-order nonuniaxial anisotropy constants. On decreasing temperature from 300 K, the nanoclusters show electron-transport properties unusual for a ferromagnetic metal, including an increase of Hall resistivity and a nonmonotonic change of negative magnetoresistance with a peak at around 100 K. The underlying physics is explained on the basis of the large polarization of surface spins and variation in the degree of their misalignments due to temperature-dependent effective anisotropy. 
    more » « less
  5. Ultra-violet light emitting diodes (UV-LEDs) and lasers based on the III-Nitride material system are very promising since they enable compact, safe, and efficient solid-state sources of UV light for a range of applications. The primary challenges for UV LEDs are related to the poor conductivity of p-AlGaN layers and the low light extraction efficiency of LED structures. Tunnel junction-based UV LEDs provide a distinct and unique pathway to eliminate several challenges associated with UV LEDs1-4. In this work, we present for the first time, a reversed-polarization (p-down) AlGaN based UV-LED utilizing bottom tunnel junction (BTJ) design. We show that compositional grading enables us to achieve the lowest reported voltage drop of 1.1 V at 20 A/cm2 among transparent AlGaN based tunnel junctions at this Al-composition. Compared to conventional LED design, a p-down structure offers lower voltage drop because the depletion barrier for both holes and electrons is lower due to polarization fields aligning with the depletion field. Furthermore, the bottom tunnel junction also allows us to use polarization grading to realize better p- and n-type doping to improve tunneling transport. The epitaxial structure of the UV-LED was grown by plasma-assisted molecular beam epitaxy (PAMBE) on metal-organic chemical vapor deposition (MOCVD)-grown n-type Al0.3Ga0.7N templates. The transparent TJ was grown using graded n++-Al0.3Ga0.7N→ n++-Al0.4Ga0.6N (Si=3×1020 cm-3) and graded p++-Al0.4Ga0.6N →p++-Al0.3Ga0.7N (Mg=1×1020 cm-3) to take advantage of induced 3D polarization charges. The high number of charges at the tunnel junction region leads to lower depletion width and efficient hole injection to the p-type layer. The UV LED active region consists of three 2.5 nm Al0.2Ga0.8N quantum wells and 7 nm Al0.3Ga0.6N quantum barriers followed by 12 nm of p- Al0.46Ga0.64N electron blocking layer (EBL). The active region was grown on top of the tunnel junction. A similar LED with p-up configuration was also grown to compare the electrical performance. The surface morphology examined by atomic force microscopy (AFM) shows smooth growth features with a surface roughness of 1.9 nm. The dendritic features on the surface are characteristic of high Si doping on the surface. The composition of each layer was extracted from the scan by high resolution x-ray diffraction (HR-XRD). The electrical characteristics of a device show a voltage drop of 4.9 V at 20 A/cm2, which corresponds to a tunnel junction voltage drop of ~ 1.1 V. This is the best lowest voltage for transparent 30% AlGaN tunnel junctions to-date and is comparable with the lowest voltage drop reported previously on non-transparent (InGaN-based) tunnel junctions at similar Al mole fraction AlGaN. On-wafer electroluminescence measurements on patterned light-emitting diodes showed single peak emission wavelength of 325 nm at 100 A/cm2 which corresponds to Al0.2Ga0.8N, confirming that efficient hole injection was achieved within the structure. The device exhibits a wavelength shift from 330 nm to 325 nm with increasing current densities from 10A/cm2 to 100A/cm2. In summary, we have demonstrated a fully transparent bottom AlGaN homojunction tunnel junction that enables p-down reversed polarization ultraviolet light emitting diodes, and has very low voltage drop at the tunnel junction. This work could enable new flexibility in the design of future III-Nitride ultraviolet LEDs and lasers. 
    more » « less