An official website of the United States government
Ferroelectric Al1−xScxN has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al1−xScxN thickness. In this work, ferroelectric behavior in 5–27 nm films of sputter deposited Al0.72Sc0.28N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. The 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.
more »
« less
Compensation of the Stress Gradient in Physical Vapor Deposited Al1−xScxN Films for Microelectromechanical Systems with Low Out-of-Plane Bending
Thin film through-thickness stress gradients produce out-of-plane bending in released microelectromechanical systems (MEMS) structures. We study the stress and stress gradient of Al0.68Sc0.32N thin films deposited directly on Si. We show that Al0.68Sc0.32N cantilever structures realized in films with low average film stress have significant out-of-plane bending when the Al1−xScxN material is deposited under constant sputtering conditions. We demonstrate a method where the total process gas flow is varied during the deposition to compensate for the native through-thickness stress gradient in sputtered Al1−xScxN thin films. This method is utilized to reduce the out-of-plane bending of 200 µm long, 500 nm thick Al0.68Sc0.32N MEMS cantilevers from greater than 128 µm to less than 3 µm.
more »
« less
- Award ID(s):
- 1944248
- PAR ID:
- 10400755
- Date Published:
- Journal Name:
- Micromachines
- Volume:
- 13
- Issue:
- 8
- ISSN:
- 2072-666X
- Page Range / eLocation ID:
- 1169
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al1−xScxN) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al1−xScxN with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al0.875Sc0.125N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the 1011¯ planes and 11¯00 planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the 1¯212¯ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.more » « less
-
This report is on the nature of strain in thin films of yttrium iron garnet (YIG) on yttrium aluminum garnet (YAG) substrates due to film-substrate lattice mismatch and the resulting induced magnetic anisotropy. Films with thickness 55 nm to 380 nm were deposited on (100), (110), and (111) YAG substrates using pulsed laser deposition (PLD) techniques and characterized by structural and magnetic characterization techniques. The in-plane strain determined to be compressive using X-ray diffraction (XRD). It varied from −0.12% to −0.98% and increased in magnitude with increasing film thickness and was relatively large in films on (100) YAG. The out-of-plane strain was tensile and also increased with increasing film thickness. The estimated strain-induced magnetic anisotropy field, found from XRD data, was out of plane; its value increased with film thickness and ranged from 0.47 kOe to 3.96 kOe. Ferromagnetic resonance (FMR) measurements at 5 to 21 GHz also revealed the presence of a perpendicular magnetic anisotropy that decreased with increasing film thickness and its values were smaller than values obtained from XRD data. The PLD YIG films on YAG substrates exhibiting a perpendicular anisotropy field have the potential for use in self-biased sensors and high-frequency devices.more » « less
-
Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.more » « less
-
A Landau–Devonshire thermodynamic energy density function for ferroelectric wurtzite aluminum scandium nitride (Al1−xScxN) solid solution is developed. It is parametrized using available experimental and theoretical data, enabling the accurate reproduction of composition-dependent ferroelectric properties, such as spontaneous polarization, dielectric permittivity, and piezoelectric constants, for both bulk and thin films. The maximum concentration of Sc for the wurtzite structure to remain ferroelectric is found to be 61 at. %. A detailed analysis of Al1−xScxN thin films reveals that the ferroelectric phase transition and properties are insensitive to substrate strain. This study lays the foundation for quantitative modeling of novel ferroelectric wurtzite solid solutions.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/mi13081169
