Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality.
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Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.
more » « less- Award ID(s):
- 2122128
- NSF-PAR ID:
- 10520787
- Publisher / Repository:
- AIP
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology B
- Volume:
- 42
- Issue:
- 3
- ISSN:
- 2166-2746
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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