Chemical solution deposition was used to deposit epitaxial Ba
Investigation of the electro-optic effect in high-Q 4H-SiC microresonators
Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. In this work, we carried out an exploratory investigation of the Pockels effect in high-quality-factor (high-
- Award ID(s):
- 2127499
- NSF-PAR ID:
- 10400974
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Letters
- Volume:
- 48
- Issue:
- 6
- ISSN:
- 0146-9592; OPLEDP
- Page Range / eLocation ID:
- Article No. 1482
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract x Sr(1−x )TiO3thin films on SrTiO3template layers on Si(001) forx = 1.0, 0.7, 0.5, 0.3, and 0.0. Effective Pockels coefficients were determined as a function of film composition both for as‐deposited films (crystallized at 600°C) and for the films after annealing at 750°C for 10 hours. Pockels response decreased monotonically with decreasing Ba content and coefficients were higher for annealed films, reaching 89 ± 3 pm/V for annealed BaTiO3. These results are contextualized with the aid of X‐ray diffraction and high‐resolution transmission microscopy, which illuminated the crystallinity and defect nature of the films. -
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Abstract High performance organic electro‐optic (OEO) materials enable ultrahigh bandwidth, small footprint, and extremely low drive voltage in silicon‐organic hybrid and plasmonic‐organic hybrid photonic devices. However, practical OEO materials under device‐relevant conditions are generally limited to performance of
≈ 300 pm V−1(10× the EO response of lithium niobate). By means of theory‐guided design, a new series of OEO chromophores is demonstrated, based on strong bis(4‐dialkylaminophenyl)phenylamino electron donating groups, capable of EO coefficients (r 33) in excess of 1000 pm V−1. Density functional theory modeling and hyper‐Rayleigh scattering measurements are performed and confirm the large improvement in hyperpolarizability due to the stronger donor. The EO performance of the exemplar chromophore in the series, BAY1, is evaluated neat and at various concentrations in polymer host and shows a nearly linear increase inr 33and poling efficiency (r 33/E p, Epis poling field) with increasing chromophore concentration. 25 wt% BAY1/polymer composite shows a higher poling efficiency (3.9± 0.1 nm2V−2) than state‐of‐the‐art neat chromophores. Using a high‐ε charge blocking layer with BAY1, a record‐highr 33(1100± 100 pm V−1) and poling efficiency (17.8± 0.8 nm2V−2) at 1310 nm are achieved. This is the first reported OEO material with electro‐optic response larger than thin‐film barium titanate. -
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The lack of a bulk second-order nonlinearity (
χ (2)) in silicon nitride (Si3N4) keeps this low-loss, CMOS-compatible platform from key active functions such as Pockels electro-optic (EO) modulation and efficient second harmonic generation (SHG). We demonstrate a successful induction ofχ (2)in Si3N4through electrical poling with an externally-applied field to align the Si-N bonds. This alignment breaks the centrosymmetry of Si3N4, and enables the bulkχ (2). The sample is heated to over 500°C to facilitate the poling. The comparison between the EO responses of poled and non-poled Si3N4, measured using a Si3N4micro-ring modulator, shows at least a 25X enhancement in ther 33EO component. The maximumχ (2)we obtain through poling is 0.30pm/V. We observe a remarkable improvement in the speed of the measured EO responses from 3 GHz to 15 GHz (3 dB bandwidth) after the poling, which confirms theχ (2)nature of the EO response induced by poling. This work paves the way for high-speed active functions on the Si3N4platform. -
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Neurotransmitters are small molecules involved in neuronal signaling and can also serve as stress biomarkers.1Their abnormal levels have been also proposed to be indicative of several neurological diseases such as Alzheimer’s disease, Parkinson’s disease, Huntington disease, among others. Hence, measuring their levels is highly important for early diagnosis, therapy, and disease prognosis. In this work, we investigate facile functionalization methods to tune and enhance sensitivity of printed graphene sensors to neurotransmitters. Sensors based on direct laser scribing and screen-printed graphene ink are studied. These printing methods offer ease of prototyping and scalable fabrication at low cost.
The effect of functionalization of laser induced graphene (LIG) by electrodeposition and solution-based deposition of TMDs (molybdenum disulfide2and tungsten disulfide) and metal nanoparticles is studied. For different processing methods, electrochemical characteristics (such as electrochemically active surface area: ECSA and heterogenous electron transfer rate: k0) are extracted and correlated to surface chemistry and defect density obtained respectively using X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These functionalization methods are observed to directly impact the sensitivity and limit of detection (LOD) of the graphene sensors for the studied neurotransmitters. For example, as compared to bare LIG, it is observed that electrodeposition of MoS2on LIG improves ECSA by 3 times and k0by 1.5 times.3Electrodeposition of MoS2also significantly reduces LOD of serotonin and dopamine in saliva, enabling detection of their physiologically relevant concentrations (in pM-nM range). In addition, chemical treatment of LIG sensors is carried out in the form of acetic acid treatment. Acetic acid treatment has been shown previously to improve C-C bonds improving the conductivity of LIG sensors.4In our work, in particular, acetic acid treatment leads to larger improvement of LOD of norepinephrine compared to MoS2electrodeposition.
In addition, we investigate the effect of plasma treatment to tune the sensor response by modifying the defect density and chemistry. For example, we find that oxygen plasma treatment of screen-printed graphene ink greatly improves LOD of norepinephrine up to three orders of magnitude, which may be attributed to the increased defects and oxygen functional groups on the surface as evident by XPS measurements. Defects are known to play a key role in enhancing the sensitivity of 2D materials to surface interactions, and have been explored in tuning/enhancing the sensor sensitivity.5Building on our previous work,3we apply a custom machine learning-based data processing method to further improve that sensitivity and LOD, and also to automatically benchmark different molecule-material pairs.
Future work includes expanding the plasma chemistry and conditions, studying the effect of precursor mixture in laser-induced solution-based functionalization, and understanding the interplay between molecule-material system. Work is also underway to improve the machine learning model by using nonlinear learning models such as neural networks to improve the sensor sensitivity, selectivity, and robustness.
References A. J. Steckl, P. Ray, (2018), doi:10.1021/acssensors.8b00726.
Y. Lei, D. Butler, M. C. Lucking, F. Zhang, T. Xia, K. Fujisawa, T. Granzier-Nakajima, R. Cruz-Silva, M. Endo, H. Terrones, M. Terrones, A. Ebrahimi,
Sci. Adv. 6 , 4250–4257 (2020).V. Kammarchedu, D. Butler, A. Ebrahimi,
Anal. Chim. Acta .1232 , 340447 (2022).H. Yoon, J. Nah, H. Kim, S. Ko, M. Sharifuzzaman, S. C. Barman, X. Xuan, J. Kim, J. Y. Park,
Sensors Actuators B Chem. 311 , 127866 (2020).T. Wu, A. Alharbi, R. Kiani, D. Shahrjerdi,
Adv. Mater. 31 , 1–12 (2019). -
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Abstract Superior infrared nonlinear optical (NLO) crystals are in urgent demand in the development of lasers and optical technologies for communications and computing. The critical challenge is to find a crystal with large non‐resonant phase‐matchable NLO coefficients and high laser damage threshold (LDTs) simultaneously, which however scale inversely. This work reports such a material, MgSiP2,that exhibits a large second harmonic generation (SHG) coefficient of
d 14≈d 36= 89 ± 5 pm V−1at 1550 nm fundamental wavelength, surpassing the commercial NLO crystals AgGaS2, AgGaSe2, and ZnGeP2. First principles theory reveals the polarizability and geometric arrangement of the [SiP4] tetrahedral units as the origin of this large nonlinear response. Remarkably, it also exhibits a high LDT value of 684 GW cm−2, which is six times larger than ZnGeP2and three times larger than CdSiP2. It has a wide transparency window of 0.53–10.35 µm, allowing broadband tunability. Further, it is Type I and Type II phase‐matchable with large effective SHG coefficients ofd eff,I≈80.2 pm V−1andd eff,II≈73.4 pm V−1. The outstanding properties of MgSiP2make it a highly attractive candidate for optical frequency conversion in the infrared.
