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In this study, we investigate the utility of Ca2FeMnO6-δand Sr2FeMnO6-δas materials with low thermal conductivity, finding potential applications in thermoelectrics, electronics, solar devices, and gas turbines for land and aerospace use. These compounds, characterized as oxygen-deficient perovskites, feature distinct vacancy arrangements. Ca2FeMnO6-δadopts a brownmillerite-type orthorhombic structure with ordered vacancy arrangement, while Sr2FeMnO6-δadopts a perovskite cubic structure with disordered vacancy distribution. Notably, both compounds exhibit remarkably low thermal conductivity, measuring below 0.50 Wm−1K−1. This places them among the materials with the lowest thermal conductivity reported for perovskites. The observed low thermal conductivity is attributed to oxygen vacancies and phonon scattering. Interestingly as SEM images show the smaller grain size, our findings suggest that creating vacancies and lowering the grain size or increasing the grain boundaries play a crucial role in achieving such low thermal conductivity values. This characteristic enhances the potential of these materials for applications where efficient heat dissipation, safety, and equipment longevity are paramount.
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Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties
Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, “random network,” “columnar scaffold,” and “island‐like,” are realized in CeO2thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with “columnar scaffold” morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a “columnar scaffold” morphology further confirms the contribution from grain boundaries. In contrast, the “random network” or “island‐like” structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide‐based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.
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- Award ID(s):
- 1902623
- PAR ID:
- 10401001
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 9
- Issue:
- 5
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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