Abstract We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO2/Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction.
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Pyroelectric gating of graphene transistor for plasmon-enhanced optical sensing
A plasmon-enhanced pyroelectric membrane was applied to control the current flow in a graphene transistor for light detection. The graphene transistor was built on a free-standing, 15-μm-thick PVDF membrane, which was doped using gold nanorods to facilitate its optical absorption. Under the resonant condition, the device exhibited a responsivity of 0.79 μA/mW.
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- Award ID(s):
- 1653673
- PAR ID:
- 10402490
- Date Published:
- Journal Name:
- CLEO: Applications and Technology
- Page Range / eLocation ID:
- JTh3A.66
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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