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1. Attribute-Guided Coupled GAN for Cross-Resolution Face Recognition

   Talreja, Veeru; Taherkhani, Fariborz; Nasrabadi, Nasser M; Valenti, Mathew (January 2019, IEEE International Conference on Biometrics Theory Applications and Systems)
2. Face description using anisotropic gradient: thermal infrared to visible face recognition

   https://doi.org/10.1117/12.2304898  

   Wan, Qianwen; Rao, Shishir Paramathma; Panetta, Karen; Agaian, Sos S.; Kaszowska, Aleksandra; Taylor, Holly; Voronina, V. (May 2018, Mobile Multimedia/Image Processing, Security, and Applications 2018)

   Agaian, Sos S.; Jassim, Sabah A. (Ed.)

   Face recognition technologies have been in high demand in the past few decades due to the increase in human-computer interactions. It is also one of the essential components in interpreting human emotions, intentions, facial expressions for smart environments. This non-intrusive biometric authentication system relies on identifying unique facial features and pairing alike structures for identification and recognition. Application areas of facial recognition systems include homeland and border security, identification for law enforcement, access control to secure networks, authentication for online banking and video surveillance. While it is easy for humans to recognize faces under varying illumination conditions, it is still a challenging task in computer vision. Non-uniform illumination and uncontrolled operating environments can impair the performance of visual-spectrum based recognition systems. To address these difficulties, a novel Anisotropic Gradient Facial Recognition (AGFR) system that is capable of autonomous thermal infrared to visible face recognition is proposed. The main contribution of this paper includes a framework for thermal/fused-thermal-visible to visible face recognition system and a novel human-visual-system inspired thermal-visible image fusion technique. Extensive computer simulations using CARL, IRIS, AT&T, Yale and Yale-B databases demonstrate the efficiency, accuracy, and robustness of the AGFR system. Keywords: Infrared thermal to visible facial recognition, anisotropic gradient, visible-to-visible face recognition, nonuniform illumination face recognition, thermal and visible face fusion method 

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3. Thermal annealing of GaN implanted with Be

   https://doi.org/10.1063/5.0080060  

   Reshchikov, M. A.; Andrieiev, O.; Vorobiov, M.; Ye, D.; Demchenko, D. O.; Sierakowski, K.; Bockowski, M.; McEwen, B.; Meyers, V.; Shahedipour-Sandvik, F. (March 2022, Journal of Applied Physics)

   GaN samples were implanted with Be and annealed in different conditions in order to activate the shallow Be_Gaacceptor. Low-temperature photoluminescence spectra were studied to find Be_Ga-related defects in the implanted samples. A yellow band with a maximum at about 2.2 eV (the YL_Beband) was observed in nearly all samples protected with an AlN cap during the annealing and in samples annealed under ultrahigh N₂pressure. A green band with a maximum at 2.35 eV (the GL2 band), attributed to the nitrogen vacancy, was the dominant defect-related luminescence band in GaN samples annealed without a protective AlN layer. The ultraviolet luminescence (UVL_Be) band with a maximum at 3.38 eV attributed to the shallow Be_Gaacceptor with the ionization energy of 0.113 eV appeared in implanted samples only after annealing at high temperatures and ultrahigh N₂pressure. This is the first observation of the UVL_Beband in Be-implanted GaN, indicating successful activation of the Be_Gaacceptor. 

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4. Electro-Thermal Investigation of GaN Vertical Trench MOSFETs

   https://doi.org/10.1109/LED.2021.3065362  

   Chatterjee, Bikramjit; Ji, Dong; Agarwal, Anchal; Chan, Silvia H.; Chowdhury, Srabanti; Choi, Sukwon (May 2021, IEEE Electron Device Letters)
5. Thermal stability of band offsets of NiO/GaN

   https://doi.org/10.1116/6.0002033  

   Xia, Xinyi; Li, Jian-Sian; Chiang, Chao-Ching; Yoo, Timothy Jinsoo; Ren, Fan; Kim, Honggyu; Pearton, S. J. (September 2022, Journal of Vacuum Science & Technology A)

   NiO is a promising alternative to p-GaN as a hole injection layer for normally-off lateral transistors or low on-resistance vertical heterojunction rectifiers. The valence band offsets of sputtered NiO on c-plane, vertical geometry homoepitaxial GaN structures were measured by x-ray photoelectron spectroscopy as a function of annealing temperatures to 600 °C. This allowed determination of the band alignment from the measured bandgap of NiO. This alignment was type II, staggered gap for both as-deposited and annealed samples. For as-deposited heterojunction, ΔE_V = 2.89 eV and ΔE_C = −2.39 eV, while for all the annealed samples, ΔE_Vvalues were in the range of 3.2–3.4 eV and ΔE_Cvalues were in the range of −(2.87–3.05) eV. The bandgap of NiO was reduced from 3.90 eV as-deposited to 3.72 eV after 600 °C annealing, which accounts for much of the absolute change in ΔE_V− ΔE_C. At least some of the spread in reported band offsets for the NiO/GaN system may arise from differences in their thermal history. 

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