An official website of the United States government
Abstract The lattice symmetry of a crystal is one of the most important factors in determining its physical properties. Particularly, low-symmetry crystals offer powerful opportunities to control light propagation, polarization and phase 1–4 . Materials featuring extreme optical anisotropy can support a hyperbolic response, enabling coupled light–matter interactions, also known as polaritons, with highly directional propagation and compression of light to deeply sub-wavelength scales 5 . Here we show that monoclinic crystals can support hyperbolic shear polaritons, a new polariton class arising in the mid-infrared to far-infrared due to shear phenomena in the dielectric response. This feature emerges in materials in which the dielectric tensor cannot be diagonalized, that is, in low-symmetry monoclinic and triclinic crystals in which several oscillators with non-orthogonal relative orientations contribute to the optical response 6,7 . Hyperbolic shear polaritons complement previous observations of hyperbolic phonon polaritons in orthorhombic 1,3,4 and hexagonal 8,9 crystal systems, unveiling new features, such as the continuous evolution of their propagation direction with frequency, tilted wavefronts and asymmetric responses. The interplay between diagonal loss and off-diagonal shear phenomena in the dielectric response of these materials has implications for new forms of non-Hermitian and topological photonic states. We anticipate that our results will motivate new directions for polariton physics in low-symmetry materials, which include geological minerals 10 , many common oxides 11 and organic crystals 12 , greatly expanding the material base and extending design opportunities for compact photonic devices.
more »
« less
Giant photonic spin Hall effect induced by hyperbolic shear polaritons
Recently, broken symmetry within crystals has been igniting tremendous research interest since it can be utilized to effectively manipulate the propagation of photons. In particular, low-symmetry Bravais crystals can support hyperbolic shear polaritons (HShPs), holding great promise for technological upgrading on the emerging research area of spinoptics. Herein, an Otto-type multilayer structure consisting of KRS5 prism, sensing medium, and monoclinic β-Ga2O3 crystal is designed to ameliorate the photonic spin Hall effect (PSHE). The surface of β-Ga2O3 is the monoclinic (010) plane (x-y plane). We show that giant spin Hall shifts with three (or two) orders of magnitude of the incident wavelength are obtained in the in-plane (or transverse) directions. The azimuthal dispersions of photonic spin Hall shifts present non‐mirror‐symmetric patterns at tuning the rotation angle of β-Ga2O3 around the z axis in plane. All of these exotic optical properties are closely correlated with the broken crystal lattice symmetry and the incurred excitation of HShPs in monoclinic β-Ga2O3 crystal. By virtue of the remarkably enhanced PSHE, our proposed Otto-type multilayer structure shows a superior biosensing performance in which the maximum sensitivity is two orders of magnitude larger than previously reported PSHE biosensors based on two-dimensional materials. In addition, the optimized physical and structural parameters including the incident angle, excitation wavelength, azimuth angle and doping concentration of β-Ga2O3, thickness and refractive index of sensing medium are also investigated and given. This work unequivocally confirms the strong influence of crystal symmetry on the PSHE, shedding important insights into understanding the rich modulation of spin-orbit interaction of light via shear polaritons and therefore facilitating potential applications in photoelectronic devices.
more »
« less
- Award ID(s):
- 1808715
- PAR ID:
- 10406017
- Date Published:
- Journal Name:
- Physical Chemistry Chemical Physics
- ISSN:
- 1463-9076
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Recent progress in the Valley Hall insulator has demonstrated a nontrivial topology property due to the distinct valley index in 2D semiconductor systems. In this work, we propose a highly tunable topological phase transition based on valley photonic crystals. The topological phase transition is realized by the inversion symmetry broken due to the refractive index change of structures consisting of optical phase change material (OPCM) with thermal excitation of different sites in a honeycomb lattice structure. Besides, simulations of light propagation at sharp corners and pseudo-spin photon coupling are conducted to quantitatively examine the topological protection. Compared with other electro-optical materials based on reconfigurable topological photonics, a wider bandwidth and greater tunability of both central bandgap frequency and topological phase transition can happen in the proposed scheme. Our platform has great potential in practical applications in lasing, light sensing, and high-contrast tunable optical filters.more » « less
-
We determine the composition dependence of the below-bandgap anisotropic refractive indices and dielectric functions of β-(AlxGa1−x)2O3 for x up to 25% Al. We use Mueller matrix generalized spectroscopic ellipsometry and investigate a set of high quality single crystalline bulk (x=0%,5%,10%,15%,20%,25%) and thin film (4.6%, 9.7%, 12%, 15%, 16.3%, 21%) samples grown by the Czochralski method and by plasma-assisted molecular beam epitaxy, respectively. Bulk samples with 0.2% silicon doping are cut from ingots with (100) surface and the unintentionally doped thin films samples are grown pseudomorphically on (010) β-Ga2O3. The combination of ellipsometry data from both sample sets permits to fully determine the optical properties of the transparent alloys. We employ a quasi-orthorhombic approach which ignores the very small shear components induced by the monoclinic crystal structure. We also ignore the possibly small effects due to strain within the pseudomorphically grown epitaxial samples. We report indices and dielectric functions for polarization along lattice vectors a, b, and reciprocal lattice vector c⋆. All indices reduce with increasing incorporation of aluminum while the spectral range of transparency increases due to the increase in bandgap energy with composition. We use our results to predict Bragg reflector multilayer structures on b-plane β-(Al0.20Ga0.80)2O3, for use in polarization sensitive narrow-band optical filters in the short wavelength region.more » « less
-
Teherani, Ferechteh H.; Rogers, David J. (Ed.)We demonstrated a metal-organic chemical vapor deposition (MOCVD) of smooth, thick, and monoclinic phase-pure gallium oxide (Ga2O3) on c-plane sapphire using silicon-oxygen bonding (SiOx) as a phase stabilizer. The corundum (α), monoclinic (β), and orthorhombic (ε) phases of Ga2O3 with a bandgap in the 4.4 – 5.1 eV range, are promising materials for power semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. The MOCVD systems are extensively used for homoepitaxial growth of β-Ga2O3 on (001), (100), (010), and (¯2 01) β-Ga2O3 substrates. These substrates are rare/expensive and have very low thermal conductivity; thus, are not suitable for high-power semiconductor devices. The c-plane sapphire is typically used as a substrate for high-power devices. The β-Ga2O3 grows in the (¯2 01) direction on sapphire. In this direction, the presence of high-density oxygen dangling bonds, frequent stacking faults, twinning, and other phases and planes impede the heteroepitaxy of thick β-Ga2O3. Previously phase stabilizations with SiOx have been reported for tetragonal and monoclinic hafnia. We were able to grow ~580nm thick β-Ga2O3 on sapphire by MOCVD at 750 oC through phase stabilization using silane. The samples grown with silane have a reduction in the surface roughness and resistivity from 10.7 nm to 4.4 nm and from 371.75 Ω.cm to 135.64 Ω.cm, respectively. These samples show a pure-monoclinic phase determined by x-ray diffraction (XRD); have tensile strain determined by Raman strain mapping. These results show that a thick, phase-pure -Ga2O3 can be grown on c-plane sapphire which can be suitable for creating power devices with better thermal management.more » « less
-
Crystal symmetry plays an important role in the Hall effects. Unconventional spin Hall effect (USHE), characterized by Dresselhaus and out-of-plane spins, has been observed in materials with low crystal symmetry. Recently, antisymmetric planar Hall effect (APHE) was discovered in rutile RuO2 and IrO2 (101) thin films, which also exhibit low crystal symmetry. In this study, we report the observation of both USHE and APHE in IrO2 (111) films, using spin-torque ferromagnetic resonance and harmonic Hall measurements, respectively. Notably, the unconventional spin-torque efficiency from Dresselhaus spin was more than double that of a previous report. Additionally, the temperature dependence of APHE suggests that it arises from the Lorentz force, constrained by crystal symmetry. Symmetry analysis supports the coexistence of USHE and APHE and demonstrates that both originate from the crystal symmetry of IrO2 (111), paving the way for a deeper understanding of Hall effects and related physical phenomena.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/D3CP00205E
