The growth of monoclinic phase‐pure gallium oxide (β‐Ga2O3) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiO
- Award ID(s):
- 2124624
- NSF-PAR ID:
- 10431786
- Editor(s):
- Teherani, Ferechteh H.; Rogers, David J.
- Date Published:
- Journal Name:
- Proc. SPIE 12422, Oxide-based Materials and Devices
- Volume:
- XIV
- Page Range / eLocation ID:
- 15
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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x ) as a phase stabilizer is reported. The β‐Ga2O3layers are grown using triethylgallium, oxygen, and silane for gallium, oxygen, and silicon precursors, respectively, at 700 °C, with and without silane flow in the process. The samples grown on sapphire with SiOx phase stabilization show a notable change from samples without phase stabilization in the roughness and resistivity, from 16.2 to 4.2 nm and from 85.82 to 135.64 Ω cm, respectively. X‐ray diffraction reveals a pure‐monoclinic phase, and Raman spatial mapping exhibits higher tensile strain in the films in the presence of SiOx . The β‐Ga2O3layers grown on an AlN template, using the same processes as for sapphire, show an excellent epitaxial relationship between β‐Ga2O3and AlN and have a significant change in β‐Ga2O3surface morphology. -
Growths of monoclinic (Al
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