Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors
- PAR ID:
- 10408986
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- ACS Omega
- Volume:
- 6
- Issue:
- 27
- ISSN:
- 2470-1343
- Page Range / eLocation ID:
- p. 17323-17334
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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