Lu, Albert, Marshall, Jordan, Wang, Yifan, Xiao, Ming, Zhang, Yuhao, and Wong, Hiu Yung. Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model. Retrieved from https://par.nsf.gov/biblio/10411004. Solid-State Electronics 198.C Web. doi:10.1016/j.sse.2022.108468.

Lu, Albert, Marshall, Jordan, Wang, Yifan, Xiao, Ming, Zhang, Yuhao, & Wong, Hiu Yung. Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model. Solid-State Electronics, 198 (C). Retrieved from https://par.nsf.gov/biblio/10411004. https://doi.org/10.1016/j.sse.2022.108468

Lu, Albert, Marshall, Jordan, Wang, Yifan, Xiao, Ming, Zhang, Yuhao, and Wong, Hiu Yung. "Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model". Solid-State Electronics 198 (C). Country unknown/Code not available. https://doi.org/10.1016/j.sse.2022.108468. https://par.nsf.gov/biblio/10411004.

@article{osti_10411004,
place = {Country unknown/Code not available}, title = {Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model}, url = {https://par.nsf.gov/biblio/10411004}, DOI = {10.1016/j.sse.2022.108468}, abstractNote = {}, journal = {Solid-State Electronics}, volume = {198}, number = {C}, author = {Lu, Albert and Marshall, Jordan and Wang, Yifan and Xiao, Ming and Zhang, Yuhao and Wong, Hiu Yung}, }