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Title: Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model
Award ID(s):
2134374
NSF-PAR ID:
10411004
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Solid-State Electronics
Volume:
198
Issue:
C
ISSN:
0038-1101
Page Range / eLocation ID:
108468
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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