Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model
- Award ID(s):
- 2134374
- NSF-PAR ID:
- 10411004
- Date Published:
- Journal Name:
- Solid-State Electronics
- Volume:
- 198
- Issue:
- C
- ISSN:
- 0038-1101
- Page Range / eLocation ID:
- 108468
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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