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Thin Si-doped Al-rich (xAl > 0.85) regrown Al(Ga)N layers were deposited on AlN on sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization of the deposition conditions, such as temperature (1150 °C), V/III ratio (750), deposition rate (0.7 Å/s), and Si concentration (6 × 10^19/cm3), resulted in a high charge carrier concentration (> 10^15 cm−3) in the Si-doped Al-rich Al(Ga)N films. A pulsed deposition condition with pulsed triethylgallium and a continuous flow of trimethylaluminum and ammonia was employed to achieve a controllable Al composition xAl > 0.95 and to prevent unintended Ga incorporation in the AlGaN material deposited using the close-coupled showerhead reactor. Also, the effect of unintentional Si incorporation on free charge carrier concentration at the regrowth interface was studied by varying the thickness of the regrown Al(Ga)N layer from 65 to < 300 nm. A maximum charge carrier concentration of 4.8 × 10^16 and 7.5 × 10^15/cm3 was achieved for Al0.97Ga0.03N and AlN films with thickness <300 nm compared to previously reported n-Al(Ga)N films with thickness ≥400 nm deposited using MOCVD technique.
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Plasma diagnostics and modeling of lithium-containing plasmas
Abstract Thin-film deposition from chemically reactive multi-component plasmas is complex, and the lack of electron collision cross-sections for even the most common metalorganic precursors and their fragments complicates their modeling based on fundamental plasma physics. This study focuses on understanding the plasma physics and chemistry in argon (Ar) plasmas containing lithium bis (trimethylsilyl) amide used to deposit Li x Si y thin films. These films are emerging as potential solid electrolytes for lithium-ion batteries, and the Li-to-Si ratio is a crucial parameter to enhance their ionic conductivity. We deposited Li x Si y films in an axial flow-through plasma reactor and studied the factors that determine the variation of the Li-to-Si ratio in films deposited at various points on a substrate spanning the entire reactor axis. While the Li-to-Si ratio is 1:2 in the precursor, the Li-to-Si ratio is as high as 3:1 in films deposited near the plasma entrance and decreases to 1:1 for films deposited downstream. Optical emission from the plasma is dominated by Li emission near the entrance, but Li emission disappears downstream, which we attribute to the complete consumption of the precursor. We hypothesized that the axially decreasing precursor concentration affects the electron energy distribution function in a way that causes different dissociation efficiencies for the production of Li and Si. We used Li line intensities to estimate the local precursor concentration and Ar line ratios to estimate the local reduced electric field to test this hypothesis. This analysis suggests that the mean electron energy increases along the reactor axis with decreasing precursor concentration. The decreasing Li-to-Si ratio with axially decreasing precursor concentration may be explained by Li release from the precursor having lower threshold energy than Si release.
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- Award ID(s):
- 2011401
- PAR ID:
- 10411322
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 55
- Issue:
- 25
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 254001
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6463/ac5c1d
