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1. Enhancement of 2DEG effective mass in AlN/Al _0.78 Ga _0.22 N high electron mobility transistor structure determined by THz optical Hall effect

   https://doi.org/10.1063/5.0087033  

   Kühne, Philipp; Armakavicius, Nerijus; Papamichail, Alexis; Tran, Dat Q.; Stanishev, Vallery; Schubert, Mathias; Paskov, Plamen P.; Darakchieva, Vanya (June 2022, Applied Physics Letters)

   We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/Al x Ga 1– x N high electron mobility transistor structure with a high aluminum content ( x =  0.78). The 2DEG sheet density [Formula: see text] cm −2 , sheet mobility [Formula: see text] cm 2 /(Vs), sheet resistance [Formula: see text] [Formula: see text], and effective mass [Formula: see text] at low temperatures [Formula: see text] are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson–Schrödinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al 0.78 Ga 22 N ([Formula: see text]). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson–Schrödinger calculations. 

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2. Breaking the r _max Barrier: Enhanced Approximation Algorithms for Partial Set Multicover Problem

   https://doi.org/10.1287/ijoc.2020.0975  

   Ran, Yingli; Zhang, Zhao; Tang, Shaojie; Du, Ding-Zhu (October 2020, INFORMS Journal on Computing)

   null (Ed.)

   Given an element set E of order n, a collection of subsets [Formula: see text], a cost c S on each set [Formula: see text], a covering requirement r e for each element [Formula: see text], and an integer k, the goal of a minimum partial set multicover problem (MinPSMC) is to find a subcollection [Formula: see text] to fully cover at least k elements such that the cost of [Formula: see text] is as small as possible and element e is fully covered by [Formula: see text] if it belongs to at least r e sets of [Formula: see text]. This problem generalizes the minimum k-union problem (MinkU) and is believed not to admit a subpolynomial approximation ratio. In this paper, we present a [Formula: see text]-approximation algorithm for MinPSMC, in which [Formula: see text] is the maximum size of a set in S. And when [Formula: see text], we present a bicriteria algorithm fully covering at least [Formula: see text] elements with approximation ratio [Formula: see text], where [Formula: see text] is a fixed number. These results are obtained by studying the minimum density subcollection problem with (or without) cardinality constraint, which might be of interest by itself. 

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3. High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al _0.85 Ga _0.15 N heterostructures on single-crystal AlN substrates

   https://doi.org/10.1063/5.0107159  

   Zhang, Zexuan; Encomendero, Jimy; Kim, Eungkyun; Singhal, Jashan; Cho, YongJin; Nomoto, Kazuki; Toita, Masato; Xing, Huili Grace; Jena, Debdeep (August 2022, Applied Physics Letters)

   The polarization difference and band offset between Al(Ga)N and GaN induce two-dimensional (2D) free carriers in Al(Ga)N/GaN heterojunctions without any chemical doping. A high-density 2D electron gas (2DEG), analogous to the recently discovered 2D hole gas in a metal-polar structure, is predicted in a N-polar pseudomorphic GaN/Al(Ga)N heterostructure on unstrained AlN. We report the observation of such 2DEGs in N-polar undoped pseudomorphic GaN/AlGaN heterostructures on single-crystal AlN substrates by molecular beam epitaxy. With a high electron density of ∼4.3 [Formula: see text]/cm 2 that maintains down to cryogenic temperatures and a room temperature electron mobility of ∼450 cm 2 /V s, a sheet resistance as low as ∼320 [Formula: see text] is achieved in a structure with an 8 nm GaN layer. These results indicate significant potential of AlN platform for future high-power RF electronics based on N-polar III-nitride high electron mobility transistors. 

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4. Initial nucleation of metastable γ-Ga ₂ O ₃ during sub-millisecond thermal anneals of amorphous Ga ₂ O ₃

   https://doi.org/10.1063/5.0087093  

   Gann, Katie R.; Chang, Celesta S.; Chang, Ming-Chiang; Sutherland, Duncan R.; Connolly, Aine B.; Muller, David A.; van Dover, Robert B.; Thompson, Michael O. (August 2022, Applied Physics Letters)

   Beta-phase gallium oxide ([Formula: see text]-Ga 2 O 3 ) is a promising semiconductor for high frequency, high temperature, and high voltage applications. In addition to the [Formula: see text]-phase, numerous other polymorphs exist and understanding the competition between phases is critical to control practical devices. The phase formation sequence of Ga 2 O 3 , starting from amorphous thin films, was determined using lateral-gradient laser spike annealing at peak temperatures of 500–1400 °C on 400 μs to 10 ms timescales, with transformations characterized by optical microscopy, x-ray diffraction, and transmission electron microscopy (TEM). The resulting phase processing map showed the [Formula: see text]-phase, a defect-spinel structure, first nucleating under all annealing times for temperatures from 650 to 800 °C. The cross-sectional TEM at the onset of the [Formula: see text]-phase formation showed nucleation near the film center with no evidence of heterogeneous nucleation at the interfaces. For temperatures above 850 °C, the thermodynamically stable [Formula: see text]-phase was observed. For anneals of 1–4 ms and temperatures below 1200 °C, small randomly oriented grains were observed. Large grains were observed for anneals below 1 ms and above 1200 °C, with anneals above 4 ms and 1200 °C resulting in textured films. The formation of the [Formula: see text]-phase prior to [Formula: see text]-phase, coupled with the observed grain structure, suggests that the [Formula: see text]-phase is kinetically preferred during thermal annealing of amorphous films, with [Formula: see text]-phase subsequently forming by nucleation at higher temperatures. The low surface energy of the [Formula: see text]-phase implied by these results suggests an explanation for the widely observed [Formula: see text]-phase inclusions in [Formula: see text]-phase Ga 2 O 3 films grown by a variety of synthesis methods. 

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5. Epitaxial growth of the first two members of the Ba _n+1 In _n O _2.5n+1 Ruddlesden–Popper homologous series

   https://doi.org/10.1116/6.0002205  

   Hensling, Felix V.; Smeaton, Michelle A.; Show, Veronica; Azizie, Kathy; Barone, Matthew R.; Kourkoutis, Lena F.; Schlom, Darrell G. (December 2022, Journal of Vacuum Science & Technology A)

   We demonstrate the epitaxial growth of the first two members, and the [Formula: see text] member of the homologous Ruddlesden–Popper series of [Formula: see text] of which the [Formula: see text] member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [[Formula: see text]O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous [Formula: see text] was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy. 

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