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1. Phase Separation in Cold Para- ${\mathrm{H}}_2$ ${\mathrm{D}}_2$ Clusters

   https://doi.org/10.1103/PhysRevLett.132.206001  

   Sliter, Russell; Hyeon-Deuk, Kim; Vilesov, Andrey F. (May 2024, Physical Review Letters)
2. Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material ${\mathrm{B}\mathrm{i}}_4{\mathrm{I}}_4$

   https://doi.org/10.1103/PhysRevX.11.031042  

   Huang, Jianwei; Li, Sheng; Yoon, Chiho; Oh, Ji Seop; Wu, Han; Liu, Xiaoyuan; Dhale, Nikhil; Zhou, Yan-Feng; Guo, Yucheng; Zhang, Yichen; et al (August 2021, Physical Review X)
3. Search for inelastic dark matter-nucleus scattering with the PICO-60 ${\mathrm{CF}}_3\mathrm{I}$ and ${\mathrm{C}}_3{\mathrm{F}}_8$ bubble chambers

   https://doi.org/10.1103/PhysRevD.108.062003  

   Adams, E; Ali, B; Arnquist, I J; Baxter, D; Behnke, E; Bressler, M; Broerman, B; Chen, C J; Clark, K; Collar, J I; et al (September 2023, Physical Review D)

   PICO bubble chambers have exceptional sensitivity to inelastic dark matter-nucleus interactions due to a combination of their extended nuclear recoil energy detection window from a few keV to O(100 keV) or more and the use of iodine as a heavy target. Inelastic dark matter-nucleus scattering is interesting for studying the properties of dark matter, where many theoretical scenarios have been developed. This study reports the results of a search for dark matter inelastic scattering with the PICO-60 bubble chambers. The analysis reported here comprises physics runs from PICO-60 bubble chambers using CF3I and C3F8. The CF3I run consisted of 36.8 kg of CF3I reaching an exposure of 3415 kg-day operating at thermodynamic thresholds between 7 and 20 keV. The C3F8 runs consisted of 52 kg of C3F8 reaching exposures of 1404 kg-day and 1167 kg-day running at thermodynamic thresholds of 2.45 keV and 3.29 keV, respectively. The analysis disfavors various scenarios, in a wide region of parameter space, that provide a feasible explanation of the signal observed by DAMA, assuming an inelastic interaction, considering that the PICO CF3I bubble chamber used iodine as the target material. 

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4. Low leakage current in heteroepitaxial ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$ ferroelectric films on $\mathrm{Ga}\mathrm{N}$

   https://doi.org/10.1103/PhysRevApplied.23.014036  

   Yazawa, Keisuke; Evans, Charles; Dickey, Elizabeth C; Tellekamp, M Brooks; Brennecka, Geoff L; Zakutayev, Andriy (January 2025, Physical Review Applied)

   Wurtzite $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as $\mathrm{Ga}\mathrm{N}$and $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$. However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$films on $\mathrm{Ga}\mathrm{N}$with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A ${\mathrm{cm}}^{-2}$) than previously reported films (1–19 A ${\mathrm{cm}}^{-2}$) having similar or better structural characteristics. We also show that, for these high-quality epitaxial $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$films. To support this conclusion, we show that ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$on lattice-matched ${\mathrm{In}}_{0.18}{\mathrm{Ga}}_{0.82}\mathrm{N}$buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society2025 

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5. Normal State ${}^{17}\mathrm{O}$ NMR Studies of ${\mathrm{Sr}}_2{\mathrm{RuO}}_4$ under Uniaxial Stress

   https://doi.org/10.1103/PhysRevX.9.021044  

   Luo, Yongkang; Pustogow, A.; Guzman, P.; Dioguardi, A. P.; Thomas, S. M.; Ronning, F.; Kikugawa, N.; Sokolov, D. A.; Jerzembeck, F.; Mackenzie, A. P.; et al (May 2019, Physical Review X)