An official website of the United States government
Topological lattice defects, such as dislocations and grain boundaries (GBs), are ubiquitously present in the bulk of quantum materials and externally tunable in metamaterials. In terms of robust modes, localized near the defect cores, they are instrumental in identifying topological crystals, featuring the hallmark band inversion at a finite momentum (translationally active type). Here we show that the GB superlattices in both two-dimensional and three-dimensional translationally active higher-order topological insulators harbor a myriad of dispersive modes that are typically placed at finite energies, but always well-separated from the bulk states. However, when the Burgers vector of the constituting edge dislocations points toward the gapless corners or hinges, both second-order and third-order topological insulators accommodate self-organized emergent topological metals near the zero energy (half-filling) in the GB mini Brillouin zone. We discuss possible material platforms where our proposed scenarios can be realized through the band-structure and defect engineering.
more »
« less
Revealing topology in metals using experimental protocols inspired by K-theory
Abstract Topological metals are conducting materials with gapless band structures and nontrivial edge-localized resonances. Their discovery has proven elusive because traditional topological classification methods require band gaps to define topological robustness. Inspired by recent theoretical developments that leverage techniques from the field of C ∗ -algebras to identify topological metals, here, we directly observe topological phenomena in gapless acoustic crystals and realize a general experimental technique to demonstrate their topology. Specifically, we not only observe robust boundary-localized states in a topological acoustic metal, but also re-interpret a composite operator—mathematically derived from the K -theory of the problem—as a new Hamiltonian whose physical implementation allows us to directly observe a topological spectral flow and measure the topological invariants. Our observations and experimental protocols may offer insights for discovering topological behaviour across a wide array of artificial and natural materials that lack bulk band gaps.
more »
« less
- PAR ID:
- 10416235
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 14
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Photonic topological insulators exhibit bulk-boundary correspondence, which requires that boundary-localized states appear at the interface formed between topologically distinct insulating materials. However, many topological photonic devices share a boundary with free space, which raises a subtle but critical problem as free space is gapless for photons above the light-line. Here, we use a local theory of topological materials to resolve bulk-boundary correspondence in heterostructures containing gapless materials and in radiative environments. In particular, we construct the heterostructure’s spectral localizer, a composite operator based on the system’s real-space description that provides a local marker for the system’s topology and a corresponding local measure of its topological protection; both quantities are independent of the material’s bulk band gap (or lack thereof). Moreover, we show that approximating radiative outcoupling as material absorption overestimates a heterostructure’s topological protection. As the spectral localizer is applicable to systems in any physical dimension and in any discrete symmetry class, our results show how to calculate topological invariants, quantify topological protection, and locate topological boundary-localized resonances in topological materials that interface with gapless media in general.more » « less
-
Abstract The geometric phase of an electronic wave function, also known as Berry phase, is the fundamental basis of the topological properties in solids. This phase can be tuned by modulating the band structure of a material, providing a way to drive a topological phase transition. However, despite significant efforts in designing and understanding topological materials, it remains still challenging to tune a given material across different topological phases while tracing the impact of the Berry phase on its quantum transport properties. Here, we report these two effects in a magnetotransport study of ZrTe 5 . By tuning the band structure with uniaxial strain, we use quantum oscillations to directly map a weak-to-strong topological insulator phase transition through a gapless Dirac semimetal phase. Moreover, we demonstrate the impact of the strain-tunable spin-dependent Berry phase on the Zeeman effect through the amplitude of the quantum oscillations. We show that such a spin-dependent Berry phase, largely neglected in solid-state systems, is critical in modeling quantum oscillations in Dirac bands of topological materials.more » « less
-
Metals with kagome lattice provide bulk materials to host both the flat-band and Dirac electronic dispersions. A new family of kagome metals was recently discovered in AV6Sn6. The Dirac electronic structures of this material need strong experimental evidence. In the manuscript, we investigate this problem by resolving the quantum oscillations in both electrical transport and magnetization in ScV6Sn6. The revealed orbits are consistent with the electronic band structure models. Furthermore, the Berry phase of a dominating orbit is revealed to be around π, providing direct evidence for the topological band structure, which is consistent with calculations. Our results demonstrate a rich physics and shed light on the correlated topological ground state of this kagome metal.more » « less
-
Topological band theory has achieved great success in the high-throughput search for topological band structures both in paramagnetic and magnetic crystal materials. However, a significant proportion of materials are topologically trivial insulators at the Fermi level. In this paper, we show that, remarkably, for a subset of the topologically trivial insulators, knowing only their electron number and the Wyckoff positions of the atoms we can separate them into two groups: the obstructed atomic insulator (OAI) and the atomic insulator (AI). The interesting group, the OAI, have a center of charge not localized on the atoms. Using the theory of topological quantum chemistry, in this work we first derive the necessary and sufficient conditions for a topologically trivial insulator to be a filling enforced obstructed atomic insulator (feOAI) in the 1651 Shubnikov space groups. Remarkably, the filling enforced criteria enable the identification of obstructed atomic bands without knowing the representations of the band structures. Hence, no calculations are needed for the filling enforced criteria, although they are needed to obtain the band gaps. With the help of the Topological Quantum Chemistry website, we have performed a high-throughput search for feOAIs and have found that 957 ICSD entries (638 unique materials) are paramagnetic feOAIs, among which 738 (475) materials have an indirect gap. The metallic obstructed surface states of feOAIs are also showcased by several material examples. Published by the American Physical Society2024more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1038/s41467-023-38862-2
