Sb V F 5 is generally assumed to oxidize methane through a methanium-to-methyl cation mechanism. However, experimentally no H 2 is observed, and the mechanism of methane oxidation has remained unsolved for several decades. To solve this problem, density functional theory calculations with multiple chemical models (mononuclear and dinuclear) were used to examine methane oxidation by Sb V F 5 in the presence of CO leading to the methyl acylium cation ([CH 3 CO] + ). While there is a low barrier for methane protonation by [Sb V F 6 ] − [H] + (the combination of Sb V F 5 and HF) to give the [Sb V F 5 ] − [CH 5 ] + ion pair, H 2 dissociation is a relatively high energy process, even with CO assistance, and so this protonation pathway is reversible. While Sb-mediated hydride transfer has a reasonable barrier, the C–H activation/σ-bond metathesis mechanism with the formation of an Sb V –Me intermediate is lower in energy. This pathway leads to the acylium cation by functionalization of the Sb V –Me intermediate with CO and is consistent with no observation of H 2 . Because this C–H activation/metal-alkyl functionalization pathway is higher in energy than methane protonation, it is also consistent with the experimentally observed methane hydrogen-to-deuterium exchange. This is the first time that evidence is presented demonstrating that Sb V F 5 acts beyond a Bronsted superacid and involves C–H activation with an organometallic intermediate. In contrast to methane, due to the much lower carbocation hydride affinity, isobutane significantly favors hydride transfer to give the tert -butyl carbocation with concomitant Sb V to Sb III reduction. In this mechanism, the resulting highly acidic Sb V –H intermediate provides a route to H 2 through protonation of isobutane, which is consistent with experiments and resolves the longstanding enigma of different experimental results for methane versus isobutane.
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Visible light induced formation of a tungsten hydride complex
When irradiated with blue light in the presence of a Lewis base (L), [CpW(CO) 3 ] 2 undergoes metal–metal bond cleavage followed by a disproportionation reaction to form [CpW(CO) 3 L] + and [CpW(CO) 3 ] − . Here, we show that in the presence of pyridinium tetrafluoroborate, [CpW(CO) 3 ] − reacts further to form a metal hydride complex CpW(CO) 3 H. The rection was monitored through in situ photo 1 H NMR spectroscopy experiments and the mechanism of light-driven hydride formation was investigated by determining quantum yields of formation. Quantum yields of formation of CpW(CO) 3 H correlate with I −1/2 (I = photon flux on our sample tube), indicating that the net disproportionation of [CpW(CO) 3 ] 2 to form the hydride precursor [CpW(CO) 3 ] − occurs primarily through a radical chain mechanism.
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- NSF-PAR ID:
- 10421644
- Date Published:
- Journal Name:
- Dalton Transactions
- Volume:
- 52
- Issue:
- 10
- ISSN:
- 1477-9226
- Page Range / eLocation ID:
- 3210 to 3218
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). 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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).more » « less
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Abstract The synthesis of the first linear coordinated CuIIcomplex Cu{N(SiMe3)Dipp}2(
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- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/d2dt03675d
