Self-assembly of vertically aligned III–V semiconductor nanowires (NWs) on two-dimensional (2D) van der Waals (vdW) nanomaterials allows for integration of novel mixed-dimensional nanosystems with unique properties for optoelectronic and nanoelectronic device applications. Here, selective-area vdW epitaxy (SA-vdWE) of InAs NWs on isolated 2D molybdenum disulfide (MoS 2 ) domains is reported for the first time. The MOCVD growth parameter space ( i.e. , V/III ratio, growth temperature, and total molar flow rates of metalorganic and hydride precursors) is explored to achieve pattern-free positioning of single NWs on isolated multi-layer MoS 2 micro-plates with one-to-one NW-to-MoS 2 domain placement. The introduction of a pre-growth poly- l -lysine surface treatment is highlighted as a necessary step for mitigation of InAs nucleation along the edges of triangular MoS 2 domains and for NW growth along the interior region of 2D micro-plates. Analysis of NW crystal structures formed under the optimal SA-vdWE condition revealed a disordered combination of wurtzite and zinc-blend phases. A transformation of the NW sidewall faceting structure is observed, resulting from simultaneous radial overgrowth during axial NW synthesis. A common lattice arrangement between axially-grown InAs NW core segments and MoS 2 domains is described as the epitaxial basis for vertical NW growth. A model is proposed for a common InAs/MoS 2 sub-lattice structure, consisting of three multiples of the cubic InAs unit cell along the [21̄1̄] direction, commensurately aligned with a 14-fold multiple of the Mo–Mo (or S–S) spacing along the [101̄0] direction of MoS 2 hexagonal lattice. The SA-vdWE growth mode described here enables controlled hybrid integration of mixed-dimensional III–V-on-2D heterostructures as novel nanosystems for applications in optoelectronics, nanoelectronics, and quantum enabling technologies.
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Self‐Assembly of Mixed‐Dimensional GeS 1− x Se x (1D Nanowire)–(2D Plate) Van der Waals Heterostructures
The integration of dissimilar materials into heterostructures is a mainstay of modern materials science and technology. An alternative strategy of joining components with different electronic structure involves mixed‐dimensional heterostructures, that is, architectures consisting of elements with different dimensionality, for example, 1D nanowires and 2D plates. Combining the two approaches can result in hybrid architectures in which both the dimensionality and composition vary between the components, potentially offering even larger contrast between their electronic structures. To date, realizing such heteromaterials mixed‐dimensional heterostructures has required sequential multi‐step growth processes. Here, it is shown that differences in precursor incorporation rates between vapor–liquid–solid growth of 1D nanowires and direct vapor–solid growth of 2D plates attached to the wires can be harnessed to synthesize heteromaterials mixed‐dimensional heterostructures in a single‐step growth process. Exposure to mixed GeS and GeSe vapors produces GeS1−
- Award ID(s):
- 1904843
- PAR ID:
- 10422454
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Small
- Volume:
- 19
- Issue:
- 41
- ISSN:
- 1613-6810
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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