Ferromagnetic nanostructures with strong anisotropic properties are highly desired for their potential integration into spintronic devices. Several anisotropic candidates, such as CoFeB and Fe–Pt, have been previously proposed, but many of them have limitations such as patterning issues or thickness restrictions. In this work, Co–BaZrO 3 (Co–BZO) vertically aligned nanocomposite (VAN) films with tunable magnetic anisotropy and coercive field strength have been demonstrated to address this need. Such tunable magnetic properties are achieved through tuning the thickness of the Co–BZO VAN structures and the aspect ratio of the Co nanostructures, which can be easily integrated into spintronic devices. As a demonstration, we have integrated the Co–BZO VAN nanostructure into tunnel junction devices, which demonstrated resistive switching alluding to Co–BZO's immense potential for future spintronic devices.
more »
« less
This content will become publicly available on December 1, 2024
Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO3 thin films
Abstract Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO 3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO 3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO 6 octahedral rotations throughout LaCoO 3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3 d -O 2 p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO 3 films while suggesting potential applications toward low-power spintronic devices.
more »
« less
- Award ID(s):
- 1902623
- NSF-PAR ID:
- 10428003
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 14
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
more » « less
Abstract Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room‐temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3films grown on SrTiO3substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6octahedral rotations in La0.9Ba0.1MnO3close to the interface are strongly suppressed. As determined from in situ X‐ray photoemission spectroscopy, O
K ‐edge X‐ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn egbandwidth caused by the quenched MnO6octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices. -
more » « less
Abstract Electric‐field‐controlled magnetism is of importance in realizing energy efficient, dense and fast information storage and processing. Strain‐mediated converse magneto‐electric (ME) coupling between ferromagnetic and ferroelectric heterostructure shows promise for realizing electric‐controlled magnetism at room temperature and is attracting a number of recent investigations. However, such ME‐effect studies have mainly focus on magnetic metals. In this work, high quality yttrium iron garnet (Y3Fe5O12(YIG)) films are deposited directly onto (100)‐oriented single‐crystal Pb (Mg1/3Nb2/3)0.7Ti0.3O3(PMN‐PT) substrates by means of magnetron sputtering. The electric‐field‐induced polarization switching and lattice strain in the PMN‐PT substrate results in two distinct magnetization states in the YIG film that are nonvolatile and electrically reversible. Because of the direct contact between the YIG and the PMN‐PT substrate, an efficient ME coupling and an almost 90° rotation of the easy axis of the YIG film can be realized. Furthermore, the electric‐field‐controlled hysteresis loop‐like ferromagnetic resonance field shifts and spin pumping signals are observed in Pt/YIG/PMN‐PT heterostructures. Thus, the obstacle is overcome via growing high‐quality YIG thin films directly onto PMN‐PT substrates and an efficient manipulation of magnetism and pure spin current transport by electric field is thereby realized. These findings are instructive for future low‐power magnetic insulator‐based spintronic devices.
-
Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide materials are a group of prospective candidates due to their superior room-temperature multiferroic response. Here, an ultrathin Bi 3 Fe 2 Mn 2 O 10+ δ layered supercell (BFMO322 LS) structure was deposited on an LaAlO 3 (LAO) (001) substrate using pulsed laser deposition. Microstructural analysis suggests that a layered supercell (LS) structure consisting of two-layer-thick Bi–O slabs and two-layer-thick Mn/Fe–O octahedra slabs was formed on top of the pseudo-perovskite interlayer (IL). A robust saturation magnetization value of 129 and 96 emu cm −3 is achieved in a 12.3 nm thick film in the in-plane (IP) and out-of-plane (OP) directions, respectively. The ferromagnetism, dielectric permittivity, and optical bandgap of the ultrathin BFMO films can be effectively tuned by thickness and morphology variation. In addition, the anisotropy of all ultrathin BFMO films switches from OP dominating to IP dominating as the thickness increases. This study demonstrates the ultrathin BFMO film with tunable multifunctionalities as a promising candidate for novel integrated spintronic devices.more » « less
-
Amorphous magnetic alloys with large perpendicular magnetic anisotropy (PMA) have emerged as a suitable material choice for spintronic memory and high-frequency non-reciprocal devices on-chip. Unlike ferromagnets, ferrimagnets offer faster switching dynamics, lower net saturation magnetization, minimal stray field and a lower net angular momentum. Ferrimagnetic thin films of Gd x Co 1− x sputter deposited as heterostructures of Ta/Pt/Gd x Co 1− x (t)/Pt on Si/SiO 2 have bulk-like PMA for thicknesses of 5–12 nm and room-temperature magnetic compensation for x = 28–32%. Preferential oxygenation of GdCo has been found to increase the effective anisotropy energy density by an order of magnitude and produce near-ideal remanence ratios. X-ray photoelectron spectroscopy accurately quantifies the metal-oxidation ratio, which shows that an oxygen-rich and Co-deficient stoichiometry (Gd 21 Co 28 O 51 ) likely weakens the ferromagnetic exchange interaction between Co–Co and contributes additional antiferromagnetic exchange through superexchange-like interactions between Gd and Co via O, resulting in a stronger out-of-plane magnetization. Even greater PMA and giant-anisotropy field of 11 kOe are achieved in super-lattices of the Gd 21 Co 28 O 51 heterostructure. The combination of ferrimagnetic ordering in amorphous Gd x Co 1− x and its affordance of pathways for engineering large PMA will enable the design of integrated high-frequency devices beyond 30 GHz and ultrafast energy efficient memory devices with switching speeds down to tens of picoseconds.more » « less
