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1. Likelihood of back-to-back tropical cyclone hazards is increasing

   https://doi.org/10.1038/s41558-023-01596-6  

   Lin, N. ; Xi, D ( March 2023 , Nature Climate Change)

   An integrated Earth system analysis is applied to project the probability of sequential hazards from tropical cyclones along the US East and Gulf coasts. Even a moderate-emissions scenario increases the chances of back-to-back tropical cyclone hazards and, possibly, two extreme tropical cyclone events impacting the United States within a short period of time. 

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2. Sherali--Adams strikes back

   O'Donnell, Ryan ; Schramm, Tselil ( January 2019 , Computational Complexity Conference)
3. A back-to-back diode model applied to van der Waals Schottky diodes

   https://doi.org/10.1088/1361-648X/ad69ef  

   Cloninger, Jeffrey_A ; Harris, Raine ; Haley, Kristine_L ; Sterbentz, Randy_M ; Taniguchi, Takashi ; Watanabe, Kenji ; Island, Joshua_O ( August 2024 , Journal of Physics: Condensed Matter)

   The use of metal and semimetal van der Waals contacts for 2D semiconducting devices has led to remarkable device optimizations. In comparison with conventional thin-film metal deposition, a reduction in Fermi level pinning at the contact interface for van der Waals contacts results in, generally, lower contact resistances and higher mobilities. Van der Waals contacts also lead to Schottky barriers that follow the Schottky–Mott rule, allowing barrier estimates on material properties alone. In this study, we present a double Schottky barrier model and apply it to a barrier tunable all van der Waals transistor. In a molybdenum disulfide (MoS₂) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky–Mott rule from simple two-terminal current–voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrierin-situusing a regional contact gate. Our results highlight the utility of a basic back-to-back diode model in extracting device characteristics in all van der Waals transistors.

    

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4. Mapping TASEP back in time

   https://doi.org/10.1007/s00440-021-01074-0  

   Petrov, Leonid ; Saenz, Axel ( July 2021 , Probability Theory and Related Fields)

   We obtain a new relation between the distributions$$\upmu _t$$${\mu }_t$at different times$$t\ge 0$$$t\ge 0$of the continuous-time totally asymmetric simple exclusion process (TASEP) started from the step initial configuration. Namely, we present a continuous-time Markov process with local interactions and particle-dependent rates which maps the TASEP distributions$$\upmu _t$$${\mu }_t$backwards in time. Under the backwards process, particles jump to the left, and the dynamics can be viewed as a version of the discrete-space Hammersley process. Combined with the forward TASEP evolution, this leads to a stationary Markov dynamics preserving$$\upmu _t$$${\mu }_t$which in turn brings new identities for expectations with respect to$$\upmu _t$$${\mu }_t$. The construction of the backwards dynamics is based on Markov maps interchanging parameters of Schur processes, and is motivated by bijectivizations of the Yang–Baxter equation. We also present a number of corollaries, extensions, and open questions arising from our constructions.

    

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5. Pulling back stability with applications to Out(Fn) and relatively hyperbolic groups: PULLING BACK STABILITY

   https://doi.org/10.1112/jlms.12071  

   Aougab, Tarik ; Durham, Matthew Gentry ; Taylor, Samuel J. ( December 2017 , Journal of the London Mathematical Society)