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1. Likelihood of back-to-back tropical cyclone hazards is increasing

   https://doi.org/10.1038/s41558-023-01596-6  

   Lin, N.; Xi, D (March 2023, Nature Climate Change)

   An integrated Earth system analysis is applied to project the probability of sequential hazards from tropical cyclones along the US East and Gulf coasts. Even a moderate-emissions scenario increases the chances of back-to-back tropical cyclone hazards and, possibly, two extreme tropical cyclone events impacting the United States within a short period of time. 

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2. Acute effects of back-to-back hurricanes on the underwater light regime of a coral reef

   https://doi.org/10.1007/s00227-018-3459-z  

   Edmunds, Peter J.; Tsounis, Georgios; Boulon, Ralf; Bramanti, Lorenzo (February 2019, Marine Biology)
3. Sherali--Adams strikes back

   O'Donnell, Ryan; Schramm, Tselil (January 2019, Computational Complexity Conference)
4. Observation of Correlations between Spin and Transverse Momenta in Back-to-Back Dihadron Production at CLAS12

   https://doi.org/10.1103/PhysRevLett.130.022501  

   Avakian, H.; Hayward, T. B.; Kotzinian, A.; Armstrong, W. R.; Atac, H.; Ayerbe Gayoso, C.; Baashen, L.; Baltzell, N. A.; Barion, L.; Bashkanov, M.; et al (January 2023, Physical Review Letters)
5. A back-to-back diode model applied to van der Waals Schottky diodes

   https://doi.org/10.1088/1361-648X/ad69ef  

   Cloninger, Jeffrey_A; Harris, Raine; Haley, Kristine_L; Sterbentz, Randy_M; Taniguchi, Takashi; Watanabe, Kenji; Island, Joshua_O (August 2024, Journal of Physics: Condensed Matter)

   Abstract The use of metal and semimetal van der Waals contacts for 2D semiconducting devices has led to remarkable device optimizations. In comparison with conventional thin-film metal deposition, a reduction in Fermi level pinning at the contact interface for van der Waals contacts results in, generally, lower contact resistances and higher mobilities. Van der Waals contacts also lead to Schottky barriers that follow the Schottky–Mott rule, allowing barrier estimates on material properties alone. In this study, we present a double Schottky barrier model and apply it to a barrier tunable all van der Waals transistor. In a molybdenum disulfide (MoS₂) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky–Mott rule from simple two-terminal current–voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrierin-situusing a regional contact gate. Our results highlight the utility of a basic back-to-back diode model in extracting device characteristics in all van der Waals transistors. 

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