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1. Long wavelength interband cascade lasers

   https://doi.org/10.1063/5.0084565  

   Massengale, J. A. ; Shen, Yixuan ; Yang, Rui Q. ; Hawkins, S. D. ; Klem, J. F. ( February 2022 , Applied Physics Letters)

   InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11  μm or extended operating wavelength beyond 13  μm. The ICLs near 11  μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm²at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2  μm, which is the longest wavelength achieved for III–V interband lasers.

    

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2. Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm

   https://doi.org/10.1088/2515-7647/ace509  

   Sumon, Md Saiful ; Sankar, Shrivatch ; You, Weicheng ; Faruque, Imad I ; Dwivedi, Sarvagya ; Arafin, Shamsul ( July 2023 , Journal of Physics: Photonics)

   Abstract In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µ m in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µ m for monolithic integration with active photonic devices on the III–V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μ m and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths. 

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3. Monolithic all-silicon flat lens for broadband LWIR imaging

   https://doi.org/10.1364/OL.426384  

   Kigner, Orrin ; Meem, Monjurul ; Baker, Brian ; Banerji, Sourangsu ; Hon, Philip W. C. ; Sensale-Rodriguez, Berardi ; Menon, Rajesh ( August 2021 , Optics Letters)

   We designed, fabricated, and characterized a flat multi-level diffractive lens comprised of only silicon with$\mathrm{d}\mathrm{i}\mathrm{a}\mathrm{m}\mathrm{e}\mathrm{t}\mathrm{e}\mathrm{r}=15.2\mathrm{m}\mathrm{m}$, focal$\mathrm{l}\mathrm{e}\mathrm{n}\mathrm{g}\mathrm{t}\mathrm{h}=19\mathrm{m}\mathrm{m}$, numerical aperture of 0.371, and operating over the long-wave infrared (LWIR)$\mathrm{s}\mathrm{p}\mathrm{e}\mathrm{c}\mathrm{t}\mathrm{r}\mathrm{u}\mathrm{m}=8\text{µ<\#comment/>}\mathrm{m}$to 14 µm. We experimentally demonstrated a field of view of 46°, depth of focus$><\#comment/>5\mathrm{m}\mathrm{m}$, and wavelength-averaged Strehl ratio of 0.46. All of these metrics were comparable to those of a conventional refractive lens. The active device thickness is only 8 µm, and its weight (including the silicon substrate) is less than 0.2 g.

    

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4. Design of infrared microspectrometer based on phase-modulated axilenses

   https://doi.org/10.1364/AO.390610  

   Chen, Yuyao ; Britton, Wesley A. ; Dal Negro, Luca ( June 2020 , Applied Optics)

   We design and characterize a novel axilens-based diffractive optics platform that flexibly combines efficient point focusing and grating selectivity and is compatible with scalable top-down fabrication based on a four-level phase mask configuration. This is achieved using phase-modulated compact axilens devices that simultaneously focus incident radiation of selected wavelengths at predefined locations with larger focal depths compared with traditional Fresnel lenses. In addition, the proposed devices are polarization-insensitive and maintain a large focusing efficiency over a broad spectral band. Specifically, here we discuss and characterize modulated axilens configurations designed for long-wavelength infrared (LWIR) in the 6 µm–12 µm wavelength range and in the 4 µm–6 µm midwavelength infrared (MWIR) range. These devices are ideally suited for monolithic integration atop the substrate layers of infrared focal plane arrays and for use as compact microspectrometers. We systematically study their focusing efficiency, spectral response, and cross-talk ratio; further, we demonstrate linear control of multiwavelength focusing on a single plane. Our design method leverages Rayleigh–Sommerfeld diffraction theory and is validated numerically using the finite element method. Finally, we demonstrate the application of spatially modulated axilenses to the realization of a compact, single-lens spectrometer. By optimizing our devices, we achieve a minimum distinguishable wavelength interval of$\mathrm{\Delta <\#comment/>}\mathrm{\lambda <\#comment/>}=240\mathrm{n}\mathrm{m}$at${\mathrm{\lambda <\#comment/>}}_c=8\text{µ<\#comment/>}\mathrm{m}$and$\mathrm{\Delta <\#comment/>}\mathrm{\lambda <\#comment/>}=165\mathrm{n}\mathrm{m}$at${\mathrm{\lambda <\#comment/>}}_c=5\text{µ<\#comment/>}\mathrm{m}$. The proposed devices add fundamental spectroscopic capabilities to compact imaging devices for a number of applications ranging from spectral sorting to LWIR and MWIR phase contrast imaging and detection.

    

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5. Modeling selective narrowband light absorption in coaxial InAs-GaAs 0.1 Sb 0.9 nanowires with partial shell segment coverage

   https://doi.org/10.1088/2632-959X/accf27  

   Abrand, Alireza ; Anttu, Nicklas ; Mohseni, Parsian K. ( May 2023 , Nano Express)

   Vertical III-V nanowire (NW) arrays are promising candidates for infrared (IR) photodetection applications. Generally, NWs with large diameters are required for efficient absorption in the IR range. However, increasing the NW diameter results in a loss of spectral selectivity and an enhancement in the photodetector dark current. Here, we propose a nanophotonic engineering approach to achieving spectrally-selective light absorption while minimizing the volume of the absorbing medium. Based on simulations performed using rigorous coupled-wave analysis (RCWA) techniques, we demonstrate dramatic tunability of the short-wavelength infrared (SWIR) light absorption properties of InAs NWs with base segments embedded in a reflective backside Au layer and with partial GaAs_0.1Sb_0.9shell segment coverage. Use of a backside reflector results in the generation of a delocalized evanescent field around the NW core segment that can be selectively captured by the partially encapsulating GaAs_0.1Sb_0.9shell layer. By adjusting the core and shell dimensions, unity absorption can be selectively achieved in the 2 to 3μm wavelength range. Due to the transparency of the GaAs_0.1Sb_0.9shell segments, wavelength-selective absorption occurs only along the InAs core segments where they are partially encapsulated. The design presented in this work paves the path toward spectrally-selective and polarization-dependent NW array-based photodetectors, in which carrier collection efficiencies can be enhanced by positioning active junctions at the predefined locations of the partial shell segments.

    

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