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1. High-harmonic generation in spin and charge current pumping at ferromagnetic or antiferromagnetic resonance in the presence of spin–orbit coupling

   https://doi.org/10.1088/2515-7639/aceaad  

   Varela-Manjarres, Jalil ; Nikolić, Branislav K. ( August 2023 , Journal of Physics: Materials)

   One of the cornerstone effects in spintronics is spin pumping by dynamical magnetization that is steadily precessing (around, for example, thez-axis) with frequencyω₀due to absorption of low-power microwaves of frequencyω₀under the resonance conditions and in the absence of any applied bias voltage. The two-decades-old ‘standard model’ of this effect, based on the scattering theory of adiabatic quantum pumping, predicts that component$I^{S_z}$of spin current vector$(I^{S_x}(t),I^{S_y}(t),I^{S_z})\propto {\omega }_0$is time-independent while$I^{S_x}(t)$and$I^{S_y}(t)$oscillate harmonically in time with a single frequencyω₀whereas pumped charge current is zero$I\equiv 0$in the same adiabatic$\propto {\omega }_0$limit. Here we employ more general approaches than the ‘standard model’, namely the time-dependent nonequilibrium Green’s function (NEGF) and the Floquet NEGF, to predict unforeseen features of spin pumping: namely precessing localized magnetic moments within a ferromagnetic metal (FM) or antiferromagnetic metal (AFM), whose conduction electrons are exposed to spin–orbit coupling (SOC) of either intrinsic or proximity origin, will pump both spin$I^{S_{\alpha }}(t)$and chargeI(t) currents. All four of these functions harmonically oscillate in time at both even and odd integer multiples$N{\omega }_0$of the driving frequencyω₀. The cutoff order of such high harmonics increases with SOC strength, reaching$N_{\mathrm{m}\mathrm{a}\mathrm{x}}\simeq 11$in the one-dimensional FM or AFM models chosen for demonstration. A higher cutoff$N_{\mathrm{m}\mathrm{a}\mathrm{x}}\simeq 25$can be achieved in realistic two-dimensional (2D) FM models defined on a honeycomb lattice, and we provide a prescription of how to realize them using 2D magnets and their heterostructures.

    

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2. Spin structure and dynamics of the topological semimetal Co3Sn2-xInxS2

   https://doi.org/10.1038/s41535-022-00523-w  

   Neubauer, Kelly J. ; Ye, Feng ; Shi, Yue ; Malinowski, Paul ; Gao, Bin ; Taddei, Keith M. ; Bourges, Philippe ; Ivanov, Alexandre ; Chu, Jiun-Haw ; Dai, Pengcheng ( December 2022 , npj Quantum Materials)

   The anomalous Hall effect (AHE), typically observed in ferromagnetic (FM) metals with broken time-reversal symmetry, depends on electronic and magnetic properties. In Co₃Sn_2-xIn_xS₂, a giant AHE has been attributed to Berry curvature associated with the FM Weyl semimetal phase, yet recent studies report complicated magnetism. We use neutron scattering to determine the spin dynamics and structures as a function ofxand provide a microscopic understanding of the AHE and magnetism interplay. Spin gap and stiffness indicate a contribution from Weyl fermions consistent with the AHE. The magnetic structure evolves fromc-axis ferromagnetism at$$x = 0$$$x=0$to a canted antiferromagnetic (AFM) structure with reducedc-axis moment and in-plane AFM order at$$x = 0.12$$$x=0.12$and further reducedc-axis FM moment at$$x = 0.3$$$x=0.3$. Since noncollinear spins can induce non-zero Berry curvature in real space acting as a fictitious magnetic field, our results revealed another AHE contribution, establishing the impact of magnetism on transport.

    

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3. Magnetic memory driven by topological insulators

   https://doi.org/10.1038/s41467-021-26478-3  

   Wu, Hao ; Chen, Aitian ; Zhang, Peng ; He, Haoran ; Nance, John ; Guo, Chenyang ; Sasaki, Julian ; Shirokura, Takanori ; Hai, Pham Nam ; Fang, Bin ; et al ( October 2021 , Nature Communications)

   Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 10⁵ A cm⁻²have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiencyθ_SHin TIs is quantified by both the SOT-induced shift of the magnetic switching field (θ_SH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θ_SH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

    

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4. Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

   https://doi.org/10.1038/s41467-021-24237-y  

   Arpaci, Sevdenur ; Lopez-Dominguez, Victor ; Shi, Jiacheng ; Sánchez-Tejerina, Luis ; Garesci, Francesca ; Wang, Chulin ; Yan, Xueting ; Sangwan, Vinod K. ; Grayson, Matthew A. ; Hersam, Mark C. ; et al ( December 2021 , Nature Communications)

   Abstract There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process. 

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5. Electrically and magnetically switchable nonlinear photocurrent in РТ-symmetric magnetic topological quantum materials

   https://doi.org/10.1038/s41524-020-00462-9  

   Wang, Hua ; Qian, Xiaofeng ( December 2020 , npj Computational Materials)

   Nonlinear photocurrent in time-reversal invariant noncentrosymmetric systems such as ferroelectric semimetals sparked tremendous interest of utilizing nonlinear optics to characterize condensed matter with exotic phases. Here we provide a microscopic theory of two types of second-order nonlinear direct photocurrents, magnetic shift photocurrent (MSC) and magnetic injection photocurrent (MIC), as the counterparts of normal shift current (NSC) and normal injection current (NIC) in time-reversal symmetry and inversion symmetry broken systems. We show that MSC is mainly governed by shift vector and interband Berry curvature, and MIC is dominated by absorption strength and asymmetry of the group velocity difference at time-reversed ±kpoints. Taking$${\cal{P}}{\cal{T}}$$$PT$-symmetric magnetic topological quantum material bilayer antiferromagnetic (AFM) MnBi₂Te₄as an example, we predict the presence of large MIC in the terahertz (THz) frequency regime which can be switched between two AFM states with time-reversed spin orderings upon magnetic transition. In addition, external electric field breaks$${\cal{P}}{\cal{T}}$$$PT$symmetry and enables large NSC response in bilayer AFM MnBi₂Te₄, which can be switched by external electric field. Remarkably, both MIC and NSC are highly tunable under varying electric field due to the field-induced large Rashba and Zeeman splitting, resulting in large nonlinear photocurrent response down to a few THz regime, suggesting bilayer AFM-zMnBi₂Te₄as a tunable platform with rich THz and magneto-optoelectronic applications. Our results reveal that nonlinear photocurrent responses governed by NSC, NIC, MSC, and MIC provide a powerful tool for deciphering magnetic structures and interactions which could be particularly fruitful for probing and understanding magnetic topological quantum materials.

    

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