White, Kelly L., Umantsev, Max A., Low, Jeremy D., Custer, James P., and Cahoon, James F. Influence of Geometry on Quasi-Ballistic Behavior in Silicon Nanowire Geometric Diodes. Retrieved from https://par.nsf.gov/biblio/10433696. ACS Applied Nano Materials 6.7 Web. doi:10.1021/acsanm.2c04666.
White, Kelly L., Umantsev, Max A., Low, Jeremy D., Custer, James P., & Cahoon, James F. Influence of Geometry on Quasi-Ballistic Behavior in Silicon Nanowire Geometric Diodes. ACS Applied Nano Materials, 6 (7). Retrieved from https://par.nsf.gov/biblio/10433696. https://doi.org/10.1021/acsanm.2c04666
White, Kelly L., Umantsev, Max A., Low, Jeremy D., Custer, James P., and Cahoon, James F.
"Influence of Geometry on Quasi-Ballistic Behavior in Silicon Nanowire Geometric Diodes". ACS Applied Nano Materials 6 (7). Country unknown/Code not available. https://doi.org/10.1021/acsanm.2c04666.https://par.nsf.gov/biblio/10433696.
@article{osti_10433696,
place = {Country unknown/Code not available},
title = {Influence of Geometry on Quasi-Ballistic Behavior in Silicon Nanowire Geometric Diodes},
url = {https://par.nsf.gov/biblio/10433696},
DOI = {10.1021/acsanm.2c04666},
abstractNote = {},
journal = {ACS Applied Nano Materials},
volume = {6},
number = {7},
author = {White, Kelly L. and Umantsev, Max A. and Low, Jeremy D. and Custer, James P. and Cahoon, James F.},
}
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