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1. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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2. Shortwave-infrared (SWIR) emitters for biological imaging: a review of challenges and opportunities

   https://doi.org/10.1515/nanoph-2017-0039  

   Thimsen, Elijah ; Sadtler, Bryce ; Berezin, Mikhail Y. ( January 2017 , Nanophotonics)

   Abstract Shortwave infrared radiation (SWIR) is the portion of the electromagnetic spectrum from approximately 900 nm to 2500 nm. Recent advances in imaging systems have expanded the application of SWIR emitters from traditional fields in materials science to biomedical imaging, and the new detectors in SWIR opened an opportunity of deep tissue imaging. Achieving deep photon penetration while maintaining high resolution is one of the main objectives and challenges in bioimaging used for the investigation of diverse processes in living organisms. The application of SWIR emitters in biological settings is, however, hampered by low quantum efficiency. So far, photoluminescent properties in the SWIR region have not been improved by extending concepts that have been developed for the visible (400–650 nm) and near-infrared (NIR, 700–900 nm) wavelengths, which indicates that the governing behavior is fundamentally different in the SWIR. The focus of this minireview is to examine the mechanisms behind the low efficiency of SWIR emitters as well as to highlight the progress in their design for biological applications. Several common mechanisms will be considered in this review: (a) the effect of the energy gap between the excited and ground state on the quantum efficiency, (b) the coupling of the excited electronic states in SWIR emitters to vibrational states in the surrounding matrix, and (c) the role of environment in quenching the excited states. General strategies to improve the quantum yields for a diverse type of SWIR emitters will be also presented. 

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3. Light Emission from Self‐Assembled and Laser‐Crystallized Chalcogenide Metasurface

   https://doi.org/10.1002/adom.201901236  

   Wang, Feifan ; Wang, Zi ; Mao, Dun ; Chen, Mingkun ; Li, Qiu ; Kananen, Thomas ; Fang, Dustin ; Soman, Anishkumar ; Hu, Xiaoyong ; Arnold, Craig B. ; et al ( February 2020 , Advanced Optical Materials)

   Subwavelength periodic confinement can collectively and selectively enhance local light intensity and enable control over the photoinduced phase transformations at the nanometer scale. Standard nanofabrication process can result in geometrical and compositional inhomogeneities in optical phase change materials, especially chalcogenides, as those materials exhibit poor chemical and thermal stability. Here the self‐assembled planar chalcogenide nanostructured array is demonstrated with resonance‐enhanced light emission to create an all‐dielectric optical metasurface, by taking advantage of the fluid properties associated with solution‐processed films. A patterned silicon membrane serves as a template for shaping the chalcogenide metasurface structure. Solution‐processed arsenic sulfide metasurface structures are self‐assembled in the suspended 250 nm silicon membrane templates. The periodic nanostructure dramatically manifests the local light–matter interaction such as absorption of incident photons, Raman emission, and photoluminescence. Also, the thermal distribution is modified by the boundaries and thus the photothermal crystallization process, leading to the formation of anisotropic nanoemitters within the field enhancement area. This hybrid structure shows wavelength‐selective anisotropic photoluminescence, which is a characteristic behavior of the collective response of the resonant‐guided modes in a periodic nanostructure. The resonance‐enhanced Purcell effect can manifest the quantum efficiency of localized light emission.

    

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4. Zinc and cadmium complexation of L‐methionine: An infrared multiple photon dissociation spectroscopy and theoretical study

   https://doi.org/10.1002/jms.4580  

   Boles, Georgia C. ; Stevenson, Brandon C. ; Hightower, Randy L. ; Berden, Giel ; Oomens, Jos ; Armentrout, P. B. ( July 2020 , Journal of Mass Spectrometry)

   Methionine (Met) cationized with Zn²⁺, forming Zn (Met–H)⁺(ACN) where ACN = acetonitrile, Zn (Met–H)⁺, and ZnCl⁺(Met), as well as Cd²⁺, forming CdCl⁺(Met), were examined by infrared multiple photon dissociation (IRMPD) action spectroscopy using light generated from the FELIX free electron laser. A series of low‐energy conformers for each complex was found using quantum‐chemical calculations in order to identify the structures formed experimentally. For all four complexes, spectral comparison indicated that the main binding motif observed is a charge solvated, tridentate structure where the metal center binds to the backbone amino group nitrogen, backbone carbonyl oxygen (where the carboxylic acid is deprotonated in two of the Zn²⁺complexes), and side‐chain sulfur. For all species, the predicted ground structures reproduce the experimental spectra well, although low‐lying conformers characterized by similar binding motifs may also contribute in each system. The current work provides valuable information regarding the binding interaction between Met and biologically relevant metals. Further, the comparison between the current work and previous analyses involving alkali metal cationized Met as well as cysteine (the other sulfur containing amino acid) cationized with Zn²⁺and Cd²⁺allows for the elucidation of important metal dependent trends associated with physiologically important metal–sulfur binding.

    

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5. Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators

   Parto, K. ; Azzam, S. I. ; Lewis, N. ; Patel, S. D. ; Umezawa, S. ; Watanabe, K. ; Taniguchi, T. ; Moody, G. ( June 2022 , ArXivorg)

   Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency up to 46% at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by nearly an order-of-magnitude. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources. 

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