Huang, Yifu, Gu, Yuqian, Chang, Yao-Feng, Chen, Ying-Chen, Akinwande, Deji, and Lee, Jack C. Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research. Retrieved from https://par.nsf.gov/biblio/10434638. IEEE Transactions on Electron Devices 70.4 Web. doi:10.1109/TED.2023.3249139.

Huang, Yifu, Gu, Yuqian, Chang, Yao-Feng, Chen, Ying-Chen, Akinwande, Deji, & Lee, Jack C. Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research. IEEE Transactions on Electron Devices, 70 (4). Retrieved from https://par.nsf.gov/biblio/10434638. https://doi.org/10.1109/TED.2023.3249139

Huang, Yifu, Gu, Yuqian, Chang, Yao-Feng, Chen, Ying-Chen, Akinwande, Deji, and Lee, Jack C. "Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research". IEEE Transactions on Electron Devices 70 (4). Country unknown/Code not available. https://doi.org/10.1109/TED.2023.3249139. https://par.nsf.gov/biblio/10434638.

@article{osti_10434638,
place = {Country unknown/Code not available}, title = {Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research}, url = {https://par.nsf.gov/biblio/10434638}, DOI = {10.1109/TED.2023.3249139}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {70}, number = {4}, author = {Huang, Yifu and Gu, Yuqian and Chang, Yao-Feng and Chen, Ying-Chen and Akinwande, Deji and Lee, Jack C.}, }