An official website of the United States government
Materials with large spin–orbit interactions generate pure spin currents with spin polarizations parallel to the interfacial surfaces that give rise to conventional spin–orbit torques. These spin–orbit torques can only efficiently and deterministically switch magnets with in-plane magnetization. Additional symmetry breaking, such as in non-collinear antiferromagnets, can generate exotic, unconventional spin–orbit torques that are associated with spin polarizations perpendicular to the interfacial planes. Here, we use micromagnetic simulations to investigate whether such exotic spin–orbit torques can generate magnetic droplet solitions in out-of-plane magnetized geometries. We show that a short, high current pulse followed by a lower constant current can nucleate and stabilize magnetic droplets. Through specific current pulse lengths, it is possible to control the number of droplets in such a system, since torques are generated over a large area. Additionally, the nucleation current scales with the out-of-plane component of the spin polarization and is linear as a function of magnetic field strength.
more »
« less
Composite Spin Hall Conductivity from Non‐Collinear Antiferromagnetic Order
Abstract Non‐collinear antiferromagnets (AFMs) are an exciting new platform for studying intrinsic spin Hall effects (SHEs), phenomena that arise from the materials’ band structure, Berry phase curvature, and linear response to an external electric field. In contrast to conventional SHE materials, symmetry analysis of non‐collinear antiferromagnets does not forbid non‐zero longitudinal and out‐of‐plane spin currents with polarization and predicts an anisotropy with current orientation to the magnetic lattice. Here, multi‐component out‐of‐plane spin Hall conductivities are reported in L12‐ordered antiferromagnetic PtMn3thin films that are uniquely generated in the non‐collinear state. The maximum spin torque efficiencies (ξ =JS /Je ≈ 0.3) are significantly larger than in Pt (ξ ≈ 0.1). Additionally, the spin Hall conductivities in the non‐collinear state exhibit the predicted orientation‐dependent anisotropy, opening the possibility for new devices with selectable spin polarization. This work demonstrates symmetry control through the magnetic lattice as a pathway to tailored functionality in magnetoelectronic systems.
more »
« less
- Award ID(s):
- 2011839
- PAR ID:
- 10438386
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 35
- Issue:
- 31
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
null (Ed.)Abstract The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn 3 GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn 3 GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.more » « less
-
Abstract Many textbook physical effects in crystals are enabled by some specific symmetries. In contrast to such ‘apparent effects’, ‘hidden effect X’ refers to the general condition where the nominal global system symmetry would disallow the effect X, whereas the symmetry of local sectors within the crystal would enable effect X. Known examples include the hidden Rashba and/or hidden Dresselhaus spin polarization that require spin-orbit coupling, but unlike their apparent counterparts are demonstrated to exist in non-magnetic systems even in inversion-symmetric crystals. Here, we discuss hidden spin polarization effect in collinear antiferromagnets without the requirement for spin-orbit coupling (SOC). Symmetry analysis suggests that antiferromagnets hosting such effect can be classified into six types depending on the global vs local symmetry. We identify which of the possible collinear antiferromagnetic compounds will harbor such hidden polarization and validate these symmetry enabling predictions with first-principles density functional calculations for several representative compounds. This will boost the theoretical and experimental efforts in finding new spin-polarized materials.more » « less
-
Abstract Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO2as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO2/TiO2/RuO2(001) AFMTJ, where a globally spin-neutral charge current is controlled by the relative orientation of the Néel vectors of the two RuO2electrodes, resulting in the TMR effect as large as ~500%. These results are expanded to normal metals which can be used as a counter electrode in AFMTJs with a single antiferromagnetic layer or other elements in spintronic devices. Our work uncovers an unexplored potential of the materials with no global spin polarization for utilizing them in spintronics.more » « less
-
Abstract Energy bands in antiferromagnets are supposed to be spin degenerate in the absence of spin–orbit coupling (SOC). Recent studies have identified formal symmetry conditions for antiferromagnetic crystals in which this degeneracy can be lifted, spin splitting,even in the vanishing SOC (i.e., non‐relativistic) limit. Materials having such symmetries could enable spin‐split antiferromagnetic spintronics without the burden of using heavy‐atom compounds. However, the symmetry conditions that involve spin and magnetic symmetry are not always effective as practical material selection filters. Furthermore, these symmetry conditions do not readily disclose trends in the magnitude and momentum dependence of the spin‐splitting energy. Here, it is shown that the formal symmetry conditions enabling spin‐split antiferromagnets can be interpreted in terms of local motif pairs, such as octahedra or tetrahedra, each carrying opposite magnetic moments. Collinear antiferromagnets with such a spin‐structure motif pair, whose components interconvert by neither translation nor spatial inversion, will show spin splitting. Such a real‐space motif‐based approach enables an easy way to identify and design materials (illustrated in real example materials) having spin splitting without the need for SOC, and offers insights into the momentum dependence and magnitude of the spin splitting.more » « less
