skip to main content


Title: Slater transition methods for core-level electron binding energies

Methods for computing core-level ionization energies using self-consistent field (SCF) calculations are evaluated and benchmarked. These include a “full core hole” (or “ΔSCF”) approach that fully accounts for orbital relaxation upon ionization, but also methods based on Slater’s transition concept in which the binding energy is estimated from an orbital energy level that is obtained from a fractional-occupancy SCF calculation. A generalization that uses two different fractional-occupancy SCF calculations is also considered. The best of the Slater-type methods afford mean errors of 0.3–0.4 eV with respect to experiment for a dataset of K-shell ionization energies, a level of accuracy that is competitive with more expensive many-body techniques. An empirical shifting procedure with one adjustable parameter reduces the average error below 0.2 eV. This shifted Slater transition method is a simple and practical way to compute core-level binding energies using only initial-state Kohn–Sham eigenvalues. It requires no more computational effort than ΔSCF and may be especially useful for simulating transient x-ray experiments where core-level spectroscopy is used to probe an excited electronic state, for which the ΔSCF approach requires a tedious state-by-state calculation of the spectrum. As an example, we use Slater-type methods to model x-ray emission spectroscopy.

 
more » « less
Award ID(s):
1955282
NSF-PAR ID:
10440323
Author(s) / Creator(s):
;
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
The Journal of Chemical Physics
Volume:
158
Issue:
9
ISSN:
0021-9606
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. The chemical structures of Co oxynitrides – in particular, interactions among N and O atoms bonded to the same cobalt – are of great importance for an array of catalytic and materials applications. X-ray diffraction (XRD), core and valence band X-ray photoelectron spectroscopy (XPS) and plane wave density functional theory (DFT) calculations are used to probe chemical and electronic interactions of nitrogen-rich CoO1-xNx (x > 0.7) films deposited on Si(100) using NH3 or N2 plasma-based sputter deposition or surface nitridation. Total energy calculations indicate that the zincblende (ZB) structure is energetically favored over the rocksalt (RS) structure for x > ~ 0.2, with an energy minimum observed in the ZB structure for x ~ 0.8 - 0.9. This is in close agreement with XPS-derived film compositions when corrected for surface oxide/hydroxide layers. XRD data indicate that films deposited on Si (100) at room temperature display either a preferred (220) orientation or no diffraction pattern, and are consistent with either rocksalt (RS) or zincblende (ZB) structure. Comparison between experimental and calculated X-ray excited valence band densities of states – also similar for all films synthesized herein – demonstrates a close agreement with a ZB, but not an RS structure. Core level XPS spectra exhibit systematic differences between films deposited in NH3 vs N2 plasma environments. Films deposited by N2 plasma magnetron sputtering exhibit greater O content as evidenced by systematic shifts in N 1s binding energies. Excellent agreement with experiment for core level binding energies is obtained for DFT calculations based on the ZB structure, but not for the RS structure. The agreement between theory and experiment demonstrates that these N-rich Co oxynitride films exhibit the ZB structure, and forms the basis of a predictive model for understanding how N and O interactions impact the electronic, magnetic and catalytic properties of these materials. 
    more » « less
  2. X-ray absorption spectroscopy (XAS) is a powerful experimental technique to probe the local order in materials with core electron excitations. Experimental interpretation requires supporting theoretical calculations. For water, these calculations are very demanding and, to date, could only be done with major approximations that limited the accuracy of the calculated spectra. This prompted an intense debate on whether a substantial revision of the standard picture of tetrahedrally bonded water was necessary to improve the agreement of theory and experiment. Here, we report a first-principles calculation of the XAS of water that avoids the approximations of prior work, thanks to recent advances in electron excitation theory. The calculated XAS spectra, and their variation with changes of temperature and/or with isotope substitution, are in good quantitative agreement with experiments. The approach requires accurate quasiparticle wave functions beyond density functional theory approximations, accounts for the dynamics of quasiparticles, and includes dynamic screening as well as renormalization effects due to the continuum of valence-level excitations. The three features observed in the experimental spectra are unambiguously attributed to excitonic effects. The preedge feature is associated with a bound intramolecular exciton, the main-edge feature is associated with an exciton localized within the coordination shell of the excited molecule, and the postedge feature is delocalized over more distant neighbors, as expected for a resonant state. The three features probe the local order at short, intermediate, and longer range relative to the excited molecule. The calculated spectra are fully consistent with a standard tetrahedral picture of water. 
    more » « less
  3. This study presents the role of 5d orbitals in the bonding, and electronic and magnetic structure of Ce imido and oxo complexes synthesized with a tris(hydroxylaminato) [((2- t BuNO)C 6 H 4 CH 2 ) 3 N] 3− (TriNO x 3− ) ligand framework, including the reported synthesis and characterization of two new alkali metal-capped Ce oxo species. X-ray spectroscopy measurements reveal that the imido and oxo materials exhibit an intermediate valent ground state of the Ce, displaying hallmark features in the Ce L III absorption of partial f-orbital occupancy that are relatively constant for all measured compounds. These spectra feature a double peak consistent with other formal Ce( iv ) compounds. Magnetic susceptibility measurements reveal enhanced levels of temperature-independent paramagnetism (TIP). In contrast to systems with direct bonding to an aromatic ligand, no clear correlation between the level of TIP and f-orbital occupancy is observed. CASSCF calculations defy a conventional van Vleck explanation of the TIP, indicating a single-reference ground state with no low-lying triplet excited state, despite accurately predicting the measured values of f-orbital occupancy. The calculations do, however, predict strong 4f/5d hybridization. In fact, within these complexes, despite having similar f-orbital occupancies and therefore levels of 4f/5d hybridization, the d-state distributions vary depending on the bonding motif (CeO vs. CeN) of the complex, and can also be fine-tuned based on varying alkali metal cation capping species. This system therefore provides a platform for understanding the characteristic nature of Ce multiple bonds and potential impact that the associated d-state distribution may have on resulting reactivity. 
    more » « less
  4. X-ray photoemission spectroscopy (XPS) has been used to examine the interaction between Au and HfS 3 at the Au/HfS 3 interface. XPS measurements reveal dissociative chemisorption of O 2 , leading to the formation of an oxide of Hf at the surface of HfS 3 . This surface hafnium oxide, along with the weakly chemisorbed molecular species, such as O 2 and H 2 O, are likely responsible for the observed p-type characteristics of HfS 3 reported elsewhere. HfS 3 devices exhibit n-type behaviour if measured in vacuum but turn p-type in air. Au thickness-dependent XPS measurements provide clear evidence of band bending as the S 2p and Hf 4f core-level peak binding energies for Au/HfS 3 are found to be shifted to higher binding energies. This band bending implies formation of a Schottky-barrier at the Au/HfS 3 interface, which explains the low measured charge carrier mobilities of HfS 3 -based devices. The transistor measurements presented herein also indicate the existence of a Schottky barrier, consistent with the XPS core-level binding energy shifts, and show that the bulk of HfS 3 is n-type. 
    more » « less
  5. Abstract

    Previous high-resolution angle-resolved photoemission (ARPES) studies of URu2Si2have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (EF) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states interact with other hole-band states that are generally absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a more globalk-space context for the presence of such states and their relation to the bulk Fermi surface (FS) topology using synchrotron-based wide-angle and photon energy-dependent ARPES mapping of the electronic structure using photon energies intermediate between the low-energy regime and the high-energy soft x-ray regime. Small-spot spatial dependence,f-resonant photoemission, Si 2pcore-levels, x-ray polarization, surface-dosing modification, and theoretical surface slab calculations are employed to assist identification of bulk versus surface state character of theEF-crossing bands and their relation to specific U- or Si-terminations of the cleaved surface. The bulk FS topology is critically compared to density functional theory (DFT) and to dynamical mean field theory calculations. In addition to clarifying some aspects of the previously measured high symmetry Γ,ZandXpoints, incommensurate 0.6a* nested Fermi-edge states located alongZNZare found to be distinctly different from the DFT FS prediction. The temperature evolution of these states aboveTHO, combined with a more detailed theoretical investigation of this region, suggests a key role of theN-point in the hidden order transition.

     
    more » « less