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1. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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2. ALMA Reveals Hidden Morphologies in the Molecular Envelope of VY Canis Majoris

   https://doi.org/10.3847/2041-8213/ace7cb  

   Singh, A. P. ; Richards, A. M. S. ; Humphreys, R. M. ; Decin, L. ; Ziurys, L. M. ( August 2023 , The Astrophysical Journal Letters)

   TheJ= 2 → 1 transition of CO near 230 GHz and theJ= 3 → 2 line of HCN at 265 GHz have been imaged in the envelope of the red hypergiant star, VY Canis Majoris (VY CMa), using the Atacama Large Millimeter Array (ALMA) with angular resolutions 0.″2–1.″5; single-dish data were added to provide sensitivity up to 30″. These images reveal a far more complex envelope, with previously unseen outflows extending 4″–9″ from the star. These new structures include an arc-like outflow with an angular separation of ∼9″ northeast from the stellar position (“NE Arc”), twin fingerlike features approximately 4″ to the north/northeast (“NE Extension”), and a roughly spherical region observed ∼7″ E of the star (“E Bubble”). The NE Arc appears to be decelerating from base (V_LSR∼ 7 km s⁻¹) to tip (V_LSR∼ 18 km s⁻¹), while the NE Extension is blueshifted withV_LSR∼ −7 km s⁻¹. Among the new features, HCN is only detected in the NE Arc. In addition, known structures Arc 1, Arc 2, and NW Arc, as well as other features closer to the star, are closely replicated in CO, suggesting that the gas and dust are well mixed. The CO spectra are consistent with the kinematic picture of VY CMa derived from HST data. Arc 2, however, has added complexity. Preliminary results from CO suggest¹²C/¹³C ∼ 22–38 across the envelope. The additional presence of at least three major episodic mass ejection events significantly broadens the current perspective of the envelope structure and mass-loss history of VY CMa.

    

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3. Imaging rotational energy transfer: comparative stereodynamics in CO + N 2 and CO + CO inelastic scattering

   https://doi.org/10.1039/D3CP02229C  

   Sun, Zhong-Fa ; Scheidsbach, Roy J. ; van Hemert, Marc C. ; van der Avoird, Ad ; Suits, Arthur G. ; Parker, David H. ( July 2023 , Physical Chemistry Chemical Physics)

   State-to-state rotational energy transfer in collisions of ground ro-vibrational state 13 CO molecules with N 2 molecules has been studied using the crossed molecular beam method under kinematically equivalent conditions used for 13 CO + CO rotationally inelastic scattering described in a previously published report (Sun et al. , Science , 2020, 369 , 307–309). The collisionally excited 13 CO molecule products are detected by the same (1 + 1′ + 1′′) VUV (Vacuum Ultra-Violet) resonance enhanced multiphoton ionization scheme coupled with velocity map ion imaging. We present differential cross sections and scattering angle resolved rotational angular momentum alignment moments extracted from experimentally measured 13 CO + N 2 scattering images and compare them with theoretical predictions from quasi-classical trajectories (QCT) on a newly calculated 13 CO–N 2 potential energy surface (PES). Good agreement between experiment and theory is found, which confirms the accuracy of the 13 CO–N 2 potential energy surface for the 1460 cm −1 collision energy studied by experiment. Experimental results for 13 CO + N 2 are compared with those for 13 CO + CO collisions. The angle-resolved product rotational angular momentum alignment moments for the two scattering systems are very similar, which indicates that the collision induced alignment dynamics observed for both systems are dominated by a hard-shell nature. However, compared to the 13 CO + CO measurements, the primary rainbow maximum in the DCSs for 13 CO + N 2 is peaked consistently at more backward scattering angles and the secondary maximum becomes much less obvious, implying that the 13 CO–N 2 PES is less anisotropic. In addition, a forward scattering component with high rotational excitation seen for 13 CO + CO does not appear for 13 CO–N 2 in the experiment and is not predicted by QCT theory. Some of these differences in collision dynamics behaviour can be predicted by a comparison between the properties of the PESs for the two systems. More specific behaviour is also predicted from analysis of the dependence on the relative collision geometry of 13 CO + N 2 trajectories compared to 13 CO + CO trajectories, which shows the special ‘do-si-do’ pathway invoked for 13 CO + CO is not effective for 13 CO + N 2 collisions. 

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4. Weyl Fermions and broken symmetry phases of laterally confined 3 He films

   https://doi.org/10.1088/1361-648X/acf42b  

   Wu, Hao ; Sauls, J. A. ( September 2023 , Journal of Physics: Condensed Matter)

   Broken symmetries in topological condensed matter systems have implications for the spectrum of Fermionic excitations confined on surfaces or topological defects. The Fermionic spectrum of confined (quasi-2D)³He-A consists of branches of chiral edge states. The negative energy states are related to the ground-state angular momentum,$L_z=(N/2)\hslash$, for$N/2$Cooper pairs. The power law suppression of the angular momentum,$L_z(T)\simeq (N/2)\hslash [1-\frac{2}{3}(\pi T/\mathrm{\Delta }{)}^2]$for$0⩽T\ll T_c$, in the fully gapped 2D chiral A-phase reflects the thermal excitation of the chiral edge Fermions. We discuss the effects of wave function overlap, and hybridization between edge states confined near opposing edge boundaries on the edge currents, ground-state angular momentum and ground-state order parameter of superfluid³He thin films. Under strong lateral confinement, the chiral A phase undergoes a sequence of phase transitions, first to a pair density wave (PDW) phase with broken translational symmetry at$D_{c2}\sim 16{\xi }_0$. The PDW phase is described by a periodic array of chiral domains with alternating chirality, separated by domain walls. The period of PDW phase diverges as the confinement length$D\to D_{c_2}$. The PDW phase breaks time-reversal symmetry, translation invariance, but is invariant under the combination of time-reversal and translation by a one-half period of the PDW. The mass current distribution of the PDW phase reflects this combined symmetry, and originates from the spectra of edge Fermions and the chiral branches bound to the domain walls. Under sufficiently strong confinement a second-order transition occurs to the non-chiral ‘polar phase’ at$D_{c1}\sim 9{\xi }_0$, in which a single p-wave orbital state of Cooper pairs is aligned along the channel.

    

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5. Effects of the on-site energy on the electronic response of Sr3(Ir1−xMnx)2O7

   https://doi.org/10.1038/s41598-022-23593-z  

   Kim, Dongwook ; Ahn, G. ; Schmehr, J. ; Wilson, S. D. ; Moon, S. J. ( December 2022 , Scientific Reports)

   We investigated the doping and temperature evolutions of the optical response of Sr₃(Ir_1−xMn_x)₂O₇single crystals with 0 ≤ x ≤ 0.36 by utilizing infrared spectroscopy. Substitution of 3dtransition metal Mn ions into Sr₃Ir₂O₇is expected to induce an insulator-to-metal transition via the decrease in the magnitude of the spin–orbit coupling and the hole doping. In sharp contrast, our data reveal the resilience of the spin–orbit coupling and the incoherent character of the charge transport. Upon Mn substitution, an incoherent in-gap excitation at about 0.25 eV appeared with the decrease in the strength of the optical transitions between the effective total angular momentumJ_effbands of the Ir ions. The resonance energies of the optical transitions between theJ_effbands which are directly proportional to the magnitude of the spin–orbit coupling hardly varied. In addition to these evolutions of the low-energy response, Mn substitution led to the emergence of a distinct high-energy optical excitation at about 1.2 eV which is larger than the resonance energies of the optical transitions between theJ_effbands. This observation indicates that the Mn 3dstates are located away from the Ir 5dstates in energy and that the large difference in the on-site energies of the transition metal ions is responsible for the incoherent charge transport and the robustness of the spin–orbit coupling. The effect of Mn substitution was also registered in the temperature dependence of the electronic response. The anomaly in the optical response of the parent compound observed at the antiferromagnetic transition temperature is notably suppressed in the Mn-doped compounds despite the persistence of the long-range antiferromagnetic ordering. The suppression of the spin-charge coupling could be related to charge disproportionation of the Ir ions.

    

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