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Abstract A body that violates Kirchhoff’s law of thermal radiation exhibits an inequality in its spectral directional absorptivity and emissivity. Achieving such an inequality is of fundamental interest as well as a prerequisite for achieving thermodynamic limits in photonic energy conversion1and radiative cooling2. Thus far, inequalities in the spectral directional emissivity and absorptivity have been limited to narrow spectral resonances3, or wavelengths well beyond the infrared regime4. Bridging the gap from basic demonstrations to practical applications requires control over a broad spectral range of the unequal spectral directional absorptivity and emissivity. In this work, we demonstrate broadband nonreciprocal thermal emissivity and absorptivity by measuring the thermal emissivity and absorptivity of gradient epsilon-near-zero InAs layers of subwavelength thicknesses (50 nm and 150 nm) with an external magnetic field. The effect occurs in a spectral range (12.5–16 μm) that overlaps with the infrared transparency window and is observed at moderate (1 T) magnetic fields.
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Simultaneous Control of Spectral And Directional Emissivity with Gradient Epsilon‐Near‐Zero InAs Photonic Structures
Abstract Controlling both the spectral bandwidth and directionality of emitted thermal radiation is a fundamental challenge in contemporary photonics. Recent work has shown that materials with a spatial gradient in the frequency range of their epsilon‐near‐zero (ENZ) response can support broad spectrum directionality in their emissivity, enabling high total radiance to specific angles of incidence. However, this capability is limited spectrally and directionally by the availability of materials with phonon‐polariton resonances over long‐wave infrared wavelengths. Here, an approach is designed and experimentally demonstrated using doped III–V semiconductors that can simultaneously tailor spectral peak, bandwidth, and directionality of infrared emissivity. InAs‐based gradient ENZ photonic structures that exhibit broadband directional emission with varying spectral bandwidths and directional ranges as a function of their doping concentration profile and thickness are epitaxially grown and characterized. Due to its easy‐to‐fabricate geometry, it is believed that this approach provides a versatile photonic platform to dynamically control broadband spectral and directional emissivity for a range of emerging applications in heat transfer and infrared sensing.
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- Award ID(s):
- 2146577
- PAR ID:
- 10440399
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 35
- Issue:
- 39
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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