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This paper demonstrates the monolithic integration of a substrate-integrated waveguide bandpass filter (BPF) and a low-noise amplifier (LNA) at F-band, fabricated in a 70-nm GaN-on-SiC technology. The three-stage LNA alone achieves a state-of-the-art average noise figure of 3.6 dB over 87–115 GHz. The LNA + BPF exhibits a peak gain of 13.6 dB over a 3 dB bandwidth of 17 GHz from 104 to 121 GHz. The average noise figure is 4.9 dB over 87–115 GHz. The OP1 dB and saturated output power are 17.6dBm and >20 dBm, respectively.
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A 27.5–46.2-GHz Broadband Low Noise Amplifier With IP3 Enhancement
This letter presents a 27.5–46.2-GHz broadband low-noise amplifier (LNA) featuring IP3 enhancement. The LNA bandwidth (BW) is extended by implementing dual-resonant input matching and a broadband output network. The LNA IP3 is enhanced by incorporating parallel PMOS and NMOS paths in the second stage, with their output currents combined through a three-winding transformer. Implemented using the GlobalFoundries 45-nm CMOS silicon-on insulator (SOI) process, the LNA demonstrates 27.5–46.2 GHz effective BW, 2.1 dB minimum noise figure (NF), and 19.8 dB peak gain. The measured IIP3 is − 3.6 dBm at 34 GHz under 25.5 mW DC power consumption. Compared to recently reported broadband LNAs with a similar frequency range, this design achieves the state-of-the-art NF, IIP3, and figure-of-merit (FoM).
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- Award ID(s):
- 1956297
- PAR ID:
- 10442742
- Date Published:
- Journal Name:
- IEEE Microwave and Wireless Technology Letters
- ISSN:
- 2771-957X
- Page Range / eLocation ID:
- 1 to 4
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1109/LMWT.2023.3283943
