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Title: An Effective Sneak‐Path Solution Based on a Transient‐Relaxation Device
Abstract

An efficient strategy for addressing individual devices is required to unveil the full potential of memristors for high‐density memory and computing applications. Existing strategies using two‐terminal selectors that are preferable for compact integration have trade‐offs in reduced generality or functional window. A strategy that applies to broad memristors and maintains their full‐range functional window is proposed. This strategy uses a type of unipolar switch featuring a transient relaxation or retention as the selector. The unidirectional current flow in the switch suppresses the sneak‐path current, whereas the transient‐relaxation window is exploited for bidirectional programming. A unipolar volatile memristor with ultralow switching voltage (e.g., <100 mV), constructed from a protein nanowire dielectric harvested fromGeobacter sulfurreducens, is specifically employed as the example switch to highlight the advantages and scalability in the strategy for array integration.

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Award ID(s):
2027102 1917630 1844904
NSF-PAR ID:
10442977
Author(s) / Creator(s):
 ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Materials
Volume:
35
Issue:
1
ISSN:
0935-9648
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    References

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    [9] Changet al.,Nano Letters,vol. 10, no. 4, pp. 1297-1301, 2010.

    [10] Qinet al., Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022.

     
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