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  • Low‐Voltage Magnetoelectric Coupling in Fe 0.5 Rh 0.5 /0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 Thin‐Film Heterostructures
Title: Low‐Voltage Magnetoelectric Coupling in Fe 0.5 Rh 0.5 /0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 Thin‐Film Heterostructures
Abstract The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe0.5Rh0.5/100 nm 0.68PbMg1/3Nb2/3O3‐0.32PbTiO3(PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe0.5Rh0.5mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe0.5Rh0.5on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10−8 s m−1at 325 K while applying a −0.75 V bias.  more » « less
Award ID(s):
1708615
PAR ID:
10446852
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Functional Materials
Volume:
31
Issue:
40
ISSN:
1616-301X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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