An official website of the United States government
Abstract Nonaqueous sodium- and lithium-oxygen batteries are of interest because of their high theoretical specific energies relative to state-of-the-art Li-ion batteries. However, several challenges limit rechargeability, including instability of the carbon electrode and electrolyte with reactive oxygen species formed during cycling. This work investigates strategies to improve the cycling efficiency of the Na–O2system and minimize irreversible degradation of electrolyte and electrode materials. We show that charging cells with a constant current/constant voltage (CCCV) protocol is a promising technique made possible by the slight solubility of sodium superoxide in nonaqueous electrolytes. In addition, the type of carbon electrode has a significant impact on cell performance and efficacy of the cycling protocol. Graphitic carbon electrodes coupled with CCCV charging demonstrate higher reversibility, more efficient oxygen evolution, and less outgassing than conventional cells using a porous carbon paper electrode and only a constant current charge. Graphical abstract
more »
« less
Current Leakage and Faradaic Efficiency Simulation of Proton-Conducting Solid Oxide Electrolysis Cells
In this study, we simulated BZY electrolyte-supported proton-conducting solid oxide cell by coupling surface defect chemistry reaction with charged species transport. We validated the model parameters by concentration as a function of temperature, conductivity under dry and wet oxygen as a function of oxygen partial pressure and temperature. The results indicate that the high electron-hole mobility (diffusivity) is mainly responsible for the high leaking current under high temperatures. The Faradaic efficiency stays low or even negative under low operating voltage or high temperature and plateaus as the cell voltage increases. The model developed in this study is a useful tool to understand the leaking current in BZY electrolyte and provide design strategies to avoid/mitigate such significant inefficiency for water electrolysis operation.
more »
« less
- Award ID(s):
- 1924096
- PAR ID:
- 10447501
- Date Published:
- Journal Name:
- ECS Transactions
- Volume:
- 111
- Issue:
- 6
- ISSN:
- 1938-5862
- Page Range / eLocation ID:
- 1159 to 1167
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
CdO has drawn much recent interest as a high-room-temperature-mobility oxide semiconductor with exciting potential for mid-infrared photonics and plasmonics. Wide-range modulation of carrier density in CdO is of interest both for fundamental reasons (to explore transport mechanisms in single samples) and for applications (in tunable photonic devices). Here, we thus apply ion-gel-based electrolyte gating to ultrathin epitaxial CdO(001) films, using transport, x-ray diffraction, and atomic force microscopy to deduce a reversible electrostatic gate response from −4 to +2 V, followed by rapid film degradation at higher gate voltage. Further advancing the mechanistic understanding of electrolyte gating, these observations are explained in terms of low oxygen vacancy diffusivity and high acid etchability in CdO. Most importantly, the 6-V-wide reversible electrostatic gating window is shown to enable ten-fold modulation of the Hall electron density, a striking voltage-induced metal–insulator transition, and 15-fold variation of the electron mobility. Such modulations, which are limited only by unintentional doping levels in ultrathin films, are of exceptional interest for voltage-tunable devices.more » « less
-
Abstract Magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ions. Here, we demonstrate room-temperature voltage-driven nitrogen transport ( i.e ., nitrogen magneto-ionics) by electrolyte-gating of a CoN film. Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co 3 O 4 . Both materials are nanocrystalline (face-centered cubic structure) and show reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Remarkably, nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results may open new avenues in applications such as brain-inspired computing or iontronics in general.more » « less
-
Abstract Li2MnO3has been contemplated as a high‐capacity cathode candidate for Li‐ion batteries; however, it evolves oxygen during battery charging under ambient conditions, which hinders a reversible reaction. However, it is unclear if this irreversible process still holds under subambient conditions. Here, the low‐temperature electrochemical properties of Li2MnO3in an aqueous LiCl electrolyte are evaluated and a reversible discharge capacity of 302 mAh g−1at a potential of 1.0 V versus Ag/AgCl at −78 °C with good rate capability and stable cycling performance, in sharp contrast to the findings in a typical Li2MnO3cell cycled at room temperature, is observed. However, the results reveal that the capacity does not originate from the reversible oxygen oxidation in Li2MnO3but the reversible Cl2(l)/Cl−(aq.) redox from the electrolyte. The results demonstrate the good catalytic properties of Li2MnO3to promote the Cl2/Cl−redox at low temperatures.more » « less
-
We demonstrate that the transfer characteristics of electrolyte-gated transistors (EGTs) with polythiophene semiconductor channels are a strong function of gate/electrolyte interfacial contact area, i.e., gate size. Polythiophene EGTs with gate/electrolyte areas much larger than the channel/electrolyte areas show a clear peak in the drain current vs gate voltage (ID–VG) behavior, as well as peak voltage hysteresis between the forward and reverse VG sweeps. Polythiophene EGTs with small gate/electrolyte areas, on the other hand, exhibit current plateaus in the ID–VG behavior and a gate-size-dependent hysteresis loop between turn on and off. The qualitatively different transport behaviors are attributed to the relative sizes of the gate/electrolyte and channel/electrolyte interface capacitances, which are proportional to interfacial area. These interfacial capacitances are in series with each other such that the total capacitance of the full gate/electrolyte/channel stack is dominated by the interface with the smallest capacitance or area. For EGTs with large gates, most of the applied VG is dropped at the channel/electrolyte interface, leading to very high charge accumulations, up to ∼0.3 holes per ring (hpr) in the case of polythiophene semiconductors. The large charge density results in sub-band-filling and a marked decrease in hole mobility, giving rise to the peak in ID–VG. For EGTs with small gates, hole accumulation saturates near 0.15 hpr, band-filling does not occur, and hole mobility is maintained at a fixed value, which leads to the ID plateau. Potential drops at the interfaces are confirmed by in situ potential measurements inside a gate/electrolyte/polymer semiconductor stack. Hole accumulations are measured with gate current-gate voltage (IG–VG) measurements acquired simultaneously with the ID–VG characteristics. Overall, our measurements demonstrate that remarkably different ID behavior can be obtained for polythiophene EGTs by controlling the magnitude of the gate-electrolyte interfacial capacitance.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1149/11106.1159ecst
