Bismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3(or more precisely its alloys with Sb2Te3for p‐type and Bi2Se3for n‐type material) has the highest thermoelectric figure of merit,
The rapid enhancement of the thermoelectric (TE) figure‐of‐merit (
- NSF-PAR ID:
- 10455856
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Energy Materials
- Volume:
- 10
- Issue:
- 38
- ISSN:
- 1614-6832
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract zT , of any material around room temperature. Since thermoelectric technology will be greatly enhanced by improving Bi2Te3or finding a superior material, this review aims to identify and quantify the key material properties that make Bi2Te3such a good thermoelectric. The largezT can be traced to the high band degeneracy, low effective mass, high carrier mobility, and relatively low lattice thermal conductivity, which all contribute to its remarkably high thermoelectric quality factor. Using literature data augmented with newer results, these material parameters are quantified, giving clear insight into the tailoring of the electronic band structure of Bi2Te3by alloying, or reducing thermal conductivity by nanostructuring. For example, this analysis clearly shows that the minority carrier excitation across the small bandgap significantly limits the thermoelectric performance of Bi2Te3, even at room temperature, showing that larger bandgap alloys are needed for higher temperature operation. Such effective material parameters can also be used for benchmarking future improvements in Bi2Te3or new replacement materials. -
Traditional manufacturing methods restrict the expansion of thermoelectric technology. Here, we demonstrate a new manufacturing approach for thermoelectric materials. Selective laser melting, an additive manufacturing technique, is performed on loose thermoelectric powders for the first time. Layer-by-layer construction is realized with bismuth telluride, Bi 2 Te 3 , and an 88% relative density was achieved. Scanning electron microscopy results suggest good fusion between each layer although multiple pores exist within the melted region. X-ray diffraction results confirm that the Bi 2 Te 3 crystal structure is preserved after laser melting. Temperature-dependent absolute Seebeck coefficient, electrical conductivity, specific heat, thermal diffusivity, thermal conductivity, and dimensionless thermoelectric figure of merit ZT are characterized up to 500 °C, and the bulk thermoelectric material produced by this technique has comparable thermoelectric and electrical properties to those fabricated from traditional methods. The method shown here may be applicable to other thermoelectric materials and offers a novel manufacturing approach for thermoelectric devices.more » « less
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Abstract Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κl) and enhance the thermoelectric figure of merit (
zT ). Through a new process based on melt‐centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κlcompared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid‐fused grains. This porous material displays azT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb)2Te3alloys. A segmented leg of melt‐centrifuged Bi0.5Sb1.5Te3and Bi0.3Sb1.7Te3could produce a high deviceZT exceeding 1.0 over the whole temperature range of 323–523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high‐efficiency porous thermoelectric materials through an unconventional melt‐centrifugation technique. -
Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board compatible devices conceptualized for operation at low-temperature gradients to generate power for wireless sensor nodes (WSNs), the fundamental units of the Internet-of-Things (IoT). CMOS and MEMS compatible micro-TEGs require thin films that can be integrated into the fabrication flow without compromising their thermoelectric properties. We present results on the thermoelectric properties of (Bi,Sb)2(Se,Te)3 thin films deposited via thermal evaporation of ternary compound pellets on four-inch SiO2 substrates at room temperature. Thin-film compositions and post-deposition annealing parameters are optimized to achieve power factors of 2.75 mW m−1 K−2 and 0.59 mW m−1 K−2 for p-type and n-type thin films. The measurement setup is optimized to characterize the thin-film properties accurately. Thin-film adhesion is further tested and optimized on several substrates. Successful lift-off of p-type and n-type thin films is completed on the same wafer to create thermocouple patterns as per the target device design proving compatibility with the standard MEMS fabrication process.more » « less
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Abstract Thermoelectric (TE) generators enable the direct and reversible conversion between heat and electricity, providing applications in both refrigeration and power generation. In the last decade, several TE materials with relatively high figures of merit (
zT ) have been reported in the low‐ and high‐temperature regimes. However, there is an urgent demand for high‐performance TE materials working in the mid‐temperature range (400–700 K). Herein, p‐type AgSbTe2materials stabilized with S and Se co‐doping are demonstrated to exhibit an outstanding maximum figure of merit (zT max) of 2.3 at 673 K and an average figure of merit (zT ave) of 1.59 over the wide temperature range of 300–673 K. This exceptional performance arises from an enhanced carrier density resulting from a higher concentration of silver vacancies, a vastly improved Seebeck coefficient enabled by the flattening of the valence band maximum and the inhibited formation of n‐type Ag2Te, and ahighly improved stability beyond 673 K. The optimized material is used to fabricate a single‐leg device with efficiencies up to 13.3% and a unicouple TE device reaching energy conversion efficiencies up to 12.3% at a temperature difference of 370 K. These results highlight an effective strategy to engineer high‐performance TE material in the mid‐temperature range.
