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Abstract The relationship between hole density and conductivity in electrochemically gated polythiophene films is examined. The films are integrated into electrolyte‐gated transistors (EGTs), so that hole accumulations can be electrochemically modulated up to ≈0.4 holes per thiophene ring (hpr). Polythiophenes include poly(3‐alkylthiophenes) (P3ATs) with four different side chain lengths – butyl (P3BT), hexyl (P3HT), octyl (P3OT), or decyl (P3DT) – and poly[2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b]thiophene] (PBTTT) and poly(3,3′′′‐didodecyl[2,2′:5′,2′′:5′′,2′′′‐quaterthiophene]‐5,5′′′‐diyl) (PQT). Analysis of the drain current – gate voltage (ID–VG) and gate current – gate voltage (IG–VG) characteristics of the EGTs reveals that all six polythiophene semiconductors exhibited reversible conductivity peaks at 0.12 – 0.15 hpr. Conductivity is suppressed beyond ≈0.4 hpr.The maximum carrier mobilities of the P3AT semiconductors increase, and hysteresis of the conductivity peaks decreases, with increasing alkyl side‐chain length. PBTTT and PQT with reduced side chain densities exhibit the largest hysteresis but have higher hole mobilities. The results suggest that at ≈0.4 hpr, a polaronic sub‐band is filled in all cases. Filling of the sub‐band correlates with a collapse in the hole mobility. The side‐chain dependence of the peak conductivity and hysteresis further suggests that Coulombic ion‐carrier interactions are important in these systems. Tailoring ion‐carrier correlations is likely important for further improvements in transport properties of electrochemically doped polythiophenes.
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Carboxylic Acid‐Functionalized Conjugated Polymer Promoting Diminished Electronic Drift and Amplified Proton Sensitivity of Remote Gates Compared to Nonpolar Surfaces in Aqueous Media
Abstract A systematic analysis is used to understand electrical drift occurring in field‐effect transistor (FET) dissolved‐analyte sensors by investigating its dependence on electrode surface‐solution combinations in a remote‐gate (RG) FET configuration. Water at pH 7 and neat acetonitrile, having different dipoles and polarizabilities, are applied to the RG surface of indium tin oxide, SiO2, hexamethyldisilazane‐modified SiO2, polystyrene, poly(styrene‐co‐acrylic acid), poly(3‐hexylthiophene‐2,5‐diyl) (P3HT), and poly [3‐(3‐carboxypropyl)thiophene‐2,5‐diyl] (PT‐COOH). It is discovered that in some cases a slow reorientation of dipoles at the interface induced by gate electric fields causes severe drift and hysteresis because of induced interface potential changes. Conductive and charged P3HT and PT‐COOH increase electrochemical stability by promoting fast surface equilibrations. It is also demonstrated that pH sensitivity of P3HT (17 mV per pH) is an indication of proton doping. PT‐COOH shows further enhanced pH sensitivity (30 mV per pH). This combination of electrochemical stability and pH response in PT‐COOH are proposed as advantageous for polymer‐based biosensors.
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- PAR ID:
- 10456888
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 6
- Issue:
- 7
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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