An official website of the United States government
Abstract Organic semiconductors enable low‐cost solution processing of optoelectronic devices on flexible substrates. Their use in contemporary applications, however, is sparse due to persistent challenges in achieving the requisite performance levels in a reliable and reproducible manner. A critical bottleneck is the inefficiency associated with charge injection. Here, large‐scale simulations are employed to identify operational windows where key device parameters that are difficult to control experimentally, such as the contact resistance, become less consequential to overall device functionality. This design methodology overcomes injection barrier limitations in organic field‐effect transistors (OFETs), leading to high charge carrier mobility and significantly expanding the range of suitable electrode materials. Leveraging this new understanding, all‐organic, solution‐deposited OFETs are successfully fabricated on flexible substrates. These devices incorporate printed contacts and showcase mobilities exceeding 5 cm2 Vs−1. These results provide a route for accessing the fundamental limits of material properties even in the absence of ideal contacts – a critical step in establishing reliable structure/property relationships and optimal material design paradigms. While reducing the injection barrier and contact resistance remains critical for achieving high OFET performance, this work demonstrates a path toward consistently achieving high charge carrier mobility through device geometry design, ultimately reducing processing complexity and cost.
more »
« less
Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier
Abstract Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto‐)electronic applications. One example is the organic field‐effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.
more »
« less
- Award ID(s):
- 1810273
- PAR ID:
- 10457101
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 30
- Issue:
- 20
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract The performance of electronic and optoelectronic devices is dominated by charge carrier injection through the metal–semiconductor contacts. Therefore, creating low-resistance electrical contacts is one of the most critical challenges in the development of devices based on new materials, particularly in the case of two-dimensional semiconductors. Herein, we report a strategy to reduce the contact resistance of MoS 2 via local pressurization. We fabricated electrical contacts using an atomic force microscopy tip and applied variable pressure ranging from 0 to 25 GPa. By measuring the transverse electronic transport properties, we show that MoS 2 undergoes a reversible semiconducting-metallic transition under pressure. Planar devices in field effect configuration with electrical contacts performed at pressures above ∼15 GPa show up to 30-fold reduced contact resistance and up to 25-fold improved field-effect mobility when compared to those measured at low pressure. Theoretical simulations show that this enhanced performance is due to improved charge injection to the MoS 2 semiconductor channel through the metallic MoS 2 phase obtained by pressurization. Our results suggest a novel strategy for realizing improved contacts to MoS 2 devices by local pressurization and for exploring emergent phenomena under mechano-electric modulation.more » « less
-
Abstract The optoelectronic properties of semiconducting polymers and device performance rely on a delicate interplay of design and processing conditions. However, screening and optimizing the relationships between these parameters for reliably fabricating organic electronics can be an arduous task requiring significant time and resources. To overcome this challenge, Polybot is developed—a robotic platform within a self‐driving lab that can efficiently produce organic field‐effect transistors (OFETs) from various semiconducting polymers via high‐throughput blade coating deposition. Polybot not only handles the fabrication process but also can conduct characterization tests on the devices and autonomously analyze the data gathered, thus facilitating the rapid acquisition of data on a large scale. This work leverages the capabilities of this platform to investigate the fabrication of OFETs using hydrogen bonding‐containing semiconducting polymers. Through high‐throughput fabrication and characterization, various data trends are analyzed, and large extents of anisotropic charge mobility are observed in devices. The materials are thoroughly characterized to understand the role of processing conditions in solid state and electronic properties of these organic semiconductors. The findings demonstrate the effectiveness of automated fabrication and characterization platforms in uncovering novel structure–property relationships, facilitating refinement of rational chemical design, and processing conditions, ultimately leading to new semiconducting materials.more » « less
-
Doping organic semiconductors has become a key technology to increase the performance of organic light-emitting diodes, solar cells, or field-effect transistors (OFETs). However, doping can be used not only to optimize these devices but also to enable new design principles as well. Here, a novel type of OFET is reported—the vertical organic tunnel field-effect transistor. Based on heterogeneously doped drain and source contacts, charge carriers are injected from an n-doped source electrode into the channel by Zener tunneling and are transported toward a p-doped drain electrode. The working mechanism of these transistors is discussed with the help of a tunnel model that takes energetic broadening of transport states in organic semiconductors and roughness of organic layers into account. The proposed device principle opens new ways to optimize OFETs. It is shown that the Zener junction included between the source and drain of the vertical organic tunnel field-effect transistors suppresses short channel effects and improves the saturation of vertical OFETs.more » « less
-
Abstract Skin-like field-effect transistors are key elements of bio-integrated devices for future user-interactive electronic-skin applications. Despite recent rapid developments in skin-like stretchable transistors, imparting self-healing ability while maintaining necessary electrical performance to these transistors remains a challenge. Herein, we describe a stretchable polymer transistor capable of autonomous self-healing. The active material consists of a blend of an electrically insulating supramolecular polymer with either semiconducting polymers or vapor-deposited metal nanoclusters. A key feature is to employ the same supramolecular self-healing polymer matrix for all active layers, i.e., conductor/semiconductor/dielectric layers, in the skin-like transistor. This provides adhesion and intimate contact between layers, which facilitates effective charge injection and transport under strain after self-healing. Finally, we fabricate skin-like self-healing circuits, including NAND and NOR gates and inverters, both of which are critical components of arithmetic logic units. This work greatly advances practical self-healing skin electronics.more » « less
