Abstract Two key interfaces in flexible perovskite solar cells (f‐PSCs) are mechanically reinforced simultaneously: one between the electron‐transport layer (ETL) and the 3D metal‐halide perovskite (MHP) thin film using self‐assembled monolayer (SAM), and the other between the 3D‐MHP thin film and the hole‐transport layer (HTL) using an in situ grown low‐dimensional (LD) MHP capping layer. The interfacial mechanical properties are measured and modeled. This rational interface engineering results in the enhancement of not only the mechanical properties of both interfaces but also their optoelectronic properties holistically. As a result, the new class of dual‐interface‐reinforced f‐PSCs has an unprecedented combination of the following three important performance parameters: high power‐conversion efficiency (PCE) of 21.03% (with reduced hysteresis), improved operational stability of 1000 hT90(duration at 90% initial PCE retained), and enhanced mechanical reliability of 10 000 cyclesn88(number of bending cycles at 88% initial PCE retained). The scientific underpinnings of these synergistic enhancements are elucidated. 
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                            High‐Performance Flexible Perovskite Solar Cells via Precise Control of Electron Transport Layer
                        
                    
    
            Abstract Flexible perovskite solar cells (f‐PSCs) have attracted great attention due to their promising commercial prospects. However, the performance off‐PSCs is generally worse than that of their rigid counterparts. Herein, it is found that the unsatisfactory performance of planar heterojunction (PHJ)f‐PSCs can be attributed to the undesirable morphology of electron transport layer (ETL), which results from the rough surface of the flexible substrate. Precise control over the thickness and morphology of ETL tin dioxide (SnO2) not only reduces the reflectance of the indium tin oxide (ITO) on polyethylene 2,6‐naphthalate (PEN) substrate and enhances photon collection, but also decreases the trap‐state densities of perovskite films and the charge transfer resistance, leading to a great enhancement of device performance. Consequently, thef‐PSCs, with a structure of PEN/ITO/SnO2/perovskite/Spiro‐OMeTAD/Ag, exhibit a power conversion efficiency (PCE) up to 19.51% and a steady output of 19.01%. Furthermore, thef‐PSCs show a robust bending resistance and maintain about 95% of initial PCE after 6000 bending cycles at a bending radius of 8 mm, and they present an outstanding long‐term stability and retain about 90% of the initial performance after >1000 h storage in air (10% relative humidity) without encapsulation. 
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                            - Award ID(s):
- 1437656
- PAR ID:
- 10457658
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Energy Materials
- Volume:
- 9
- Issue:
- 44
- ISSN:
- 1614-6832
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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