Two‐dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS2exhibit exceptionally strong nonlinear optical responses, while nanoscale control of the amplitude, polar orientation, and phase of the nonlinear light in TMDCs remains challenging. In this work, by interfacing monolayer MoS2with epitaxial PbZr0.2Ti0.8O3(PZT) thin films and free‐standing PZT membranes, the amplitude and polarization of the second harmonic generation (SHG) signal are modulated via ferroelectric domain patterning, which demonstrates that PZT membranes can lead to in‐operando programming of nonlinear light polarization. The interfacial coupling of the MoS2polar axis with either the out‐of‐plane polar domains of PZT or the in‐plane polarization of domain walls tailors the SHG light polarization into different patterns with distinct symmetries, which are modeled via nonlinear electromagnetic theory. This study provides a new material platform that enables reconfigurable design of light polarization at the nanoscale, paving the path for developing novel optical information processing, smart light modulators, and integrated photonic circuits.
Atomically thin transition metal dichalcogenides (TMDs) in their excited states can serve as exceptionally small building blocks for active optical platforms. In this scheme, optical excitation provides a practical approach to control light‐TMD interactions via the photocarrier generation, in an ultrafast manner. Here, it is demonstrated that via a controlled generation of photocarriers the second‐harmonic generation (SHG) from a monolayer MoS2crystal can be substantially modulated up to ≈55% within a timeframe of ≈250 fs, a set of performance characteristics that showcases the promise of low‐dimensional materials for all‐optical nonlinear data processing. The combined experimental and theoretical study suggests that the large SHG modulation stems from the correlation between the second‐order dielectric susceptibility χ(2)and the density of photoexcited carriers in MoS2. Indeed, the depopulation of the conduction band electrons, at the vicinity of the high‐symmetry
- PAR ID:
- 10458877
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Small
- Volume:
- 16
- Issue:
- 5
- ISSN:
- 1613-6810
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract The dearth of suitable materials significantly restricts the practical development of infrared (IR) laser systems with highly efficient and broadband tuning. Recently, γ‐NaAsSe2is reported, and it exhibits a large nonlinear second‐harmonic generation (SHG) coefficient of 590 pm V−1at 2 µm. However, the crystal growth of γ‐NaAsSe2is challenging because it undergoes a phase transition to centrosymmetric δ‐NaAsSe2. Herein, the stabilization of non‐centrosymmetric γ‐NaAsSe2by doping the As site with Sb, which results in γ‐NaAs0.95Sb0.05Se2is reported. The congruent melting behavior is confirmed by differential thermal analysis with a melting temperature of 450 °C and crystallization temperature of 415 °C. Single crystals with dimensions of 3 mm × 2 mm are successfully obtained via zone refining and the Bridgman method. The purification of the material plays a significant role in crystal growth and results in a bandgap of 1.78 eV and thermal conductivity of 0.79 Wm−1K−1. The single‐crystal SHG coefficient of γ‐NaAs0.95Sb0.05Se2exhibits an enormous value of |
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