Superior infrared nonlinear optical (NLO) crystals are in urgent demand in the development of lasers and optical technologies for communications and computing. The critical challenge is to find a crystal with large non‐resonant phase‐matchable NLO coefficients and high laser damage threshold (LDTs) simultaneously, which however scale inversely. This work reports such a material, MgSiP2,that exhibits a large second harmonic generation (SHG) coefficient of
The dearth of suitable materials significantly restricts the practical development of infrared (IR) laser systems with highly efficient and broadband tuning. Recently, γ‐NaAsSe2is reported, and it exhibits a large nonlinear second‐harmonic generation (SHG) coefficient of 590 pm V−1at 2 µm. However, the crystal growth of γ‐NaAsSe2is challenging because it undergoes a phase transition to centrosymmetric δ‐NaAsSe2. Herein, the stabilization of non‐centrosymmetric γ‐NaAsSe2by doping the As site with Sb, which results in γ‐NaAs0.95Sb0.05Se2is reported. The congruent melting behavior is confirmed by differential thermal analysis with a melting temperature of 450 °C and crystallization temperature of 415 °C. Single crystals with dimensions of 3 mm × 2 mm are successfully obtained via zone refining and the Bridgman method. The purification of the material plays a significant role in crystal growth and results in a bandgap of 1.78 eV and thermal conductivity of 0.79 Wm−1K−1. The single‐crystal SHG coefficient of γ‐NaAs0.95Sb0.05Se2exhibits an enormous value of |
- Award ID(s):
- 2039351
- NSF-PAR ID:
- 10386460
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 33
- Issue:
- 9
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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