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Abstract The preparation of 0.58 Li2S + 0.315 SiS2+ 0.105 LiPO3glass, and the impacts of polysulfide and P1Pdefect structure impurities on the glass transition temperature (Tg), crystallization temperature (Tc), working range (ΔT≡ Tc‐ Tg), fragility index, and the Raman spectra were evaluated using statistical analysis. In this study, 33 samples of this glass composition were synthesized through melt‐quenching. Thermal analysis was conducted to determine the glass transition temperature, crystallization temperature, working range, and fragility index through differential scanning calorimetry. The quantity of the impurities described above was determined through Raman spectroscopy peak analysis. Elemental sulfur was doped into a glass to quantify the wt% sulfur content in the glasses. Linear regression analysis was conducted to determine the impact of polysulfide impurities and P1Pdefect impurities on the thermal properties. Polysulfide impurities were found to decrease theTgat rate of nearly 12°C per 1 wt% increase in sulfur concentration. The sulfur concentration does not have a statistically significant impact on the other properties (α = 0.05). The P1Pdefect structure appears to decrease the resistance to crystallization of the glass by measurably decreasing the working range of the glasses, but further study is necessary to fully quantify and determine this.
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Switching between Crystallization from the Glassy and the Undercooled Liquid Phase in Phase Change Material Ge 2 Sb 2 Te 5
Abstract Controlling crystallization kinetics is key to overcome the temperature–time dilemma in phase change materials employed for data storage. While the amorphous phase must be preserved for more than 10 years at slightly above room temperature to ensure data integrity, it has to crystallize on a timescale of several nanoseconds following a moderate temperature increase to near 2/3Tmto compete with other memory devices such as dynamic random access memory (DRAM). Here, a calorimetric demonstration that this striking variation in kinetics involves crystallization occurring either from the glassy or from the undercooled liquid state is provided. Measurements of crystallization kinetics of Ge2Sb2Te5with heating rates spanning over six orders of magnitude reveal a fourfold decrease in Kissinger activation energy for crystallization upon the glass transition. This enables rapid crystallization above the glass transition temperatureTg. Moreover, highly unusual for glass‐forming systems, crystallization at conventional heating rates is observed more than 50 °C belowTg, where the atomic mobility should be vanishingly small.
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- PAR ID:
- 10460174
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 31
- Issue:
- 39
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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