The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here, we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin–charge conversion can give rise to a different type of spin current-related spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe1−
Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization, spin‐orbit torque (SOT) operations are currently energy inefficient due to a low damping‐like SOT efficiency per unit current bias, and/or the very high resistivity of the spin Hall materials. This work reports an advantageous spin Hall material, Pd1−
- PAR ID:
- 10461680
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 29
- Issue:
- 16
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
Abstract x Mnx )0.6Pt0.4, Fe1−x Mnx /Pt multilayer, Fe1−x Mnx withx = 0.17–0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge–spin conversion in ferromagnets and to exploit it for potential spintronic applications. -
Efficient manipulation of antiferromagnetically coupled materials that are integration-friendly and have strong perpendicular magnetic anisotropy (PMA) is of great interest for low-power, fast, dense magnetic storage and computing. Here, we report a distinct, giant bulk damping-like spin–orbit torque in strong-PMA ferrimagnetic Fe 100− x Tb x single layers that are integration-friendly (composition-uniform, amorphous, and sputter-deposited). For sufficiently thick layers, this bulk torque is constant in the efficiency per unit layer thickness, [Formula: see text]/ t, with a record-high value of 0.036 ± 0.008 nm −1 , and the damping-like torque efficiency [Formula: see text] achieves very large values for thick layers, up to 300% for 90 nm layers. This giant bulk torque by itself switches tens of nm thick Fe 100− x Tb x layers that have very strong PMA and high coercivity at current densities as low as a few MA/cm 2 . Surprisingly, for a given layer thickness, [Formula: see text] shows strong composition dependence and becomes negative for composition where the total angular momentum is oriented parallel to the magnetization rather than antiparallel. Our findings of giant bulk spin torque efficiency and intriguing torque-compensation correlation will stimulate study of such unique spin–orbit phenomena in a variety of ferrimagnetic hosts. This work paves a promising avenue for developing ultralow-power, fast, dense ferrimagnetic storage and computing devices.more » « less
-
Abstract Spin waves, quantized as magnons, have low energy loss and magnetic damping, which are critical for devices based on spin‐wave propagation needed for information processing devices. The organic‐based magnet [V(TCNE)
x ; TCNE = tetracyanoethylene;x ≈ 2] has shown an extremely low magnetic damping comparable to, for example, yttrium iron garnet (YIG). The excitation, detection, and utilization of coherent and non‐coherent spin waves on various modes in V(TCNE)x is demonstrated and show that the angular momentum carried by microwave‐excited coherent spin waves in a V(TCNE)x film can be transferred into an adjacent Pt layer via spin pumping and detected using the inverse spin Hall effect. The spin pumping efficiency can be tuned by choosing different excited spin wave modes in the V(TCNE)x film. In addition, it is shown that non‐coherent spin waves in a V(TCNE)x film, excited thermally via the spin Seebeck effect, can also be used as spin pumping source that generates an electrical signal in Pt with a sign change in accordance with the magnetization switching of the V(TCNE)x . Combining coherent and non‐coherent spin wave detection, the spin pumping efficiency can be thermally controlled, and new insight is gained for the spintronic applications of spin wave modes in organic‐based magnets. -
Abstract Many key electronic technologies (e.g., large‐scale computing, machine learning, and superconducting electronics) require new memories that are at the same time fast, reliable, energy‐efficient, and of low‐impedance, which has remained a challenge. Nonvolatile magnetoresistive random access memories (MRAMs) driven by spin–orbit torques (SOTs) have promise to be faster and more energy‐efficient than conventional semiconductor and spin‐transfer‐torque magnetic memories. It is reported that the spin Hall effect of low‐resistivity Au0.25Pt0.75thin films enables ultrafast antidamping‐torque switching of SOT‐MRAM devices for current pulse widths as short as 200 ps. If combined with industrial‐quality lithography and already‐demonstrated interfacial engineering, an optimized MRAM cell based on Au0.25Pt0.75can have energy‐efficient, ultrafast, and reliable switching, for example, a write energy of <1 fJ (<50 fJ) for write error rate of 50% (<10−5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75devices is ten times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced nonuniformity within the free layer. The feasibility of Au0.25Pt0.75‐based SOT‐MRAMs as a candidate for ultrafast, reliable, energy‐efficient, low‐impedance, and unlimited‐endurance memory is demonstrated.
-
Abstract Magnetic skyrmions are topologically protected spin textures that are being investigated for their potential use in next generation magnetic storage devices. Here, magnetic skyrmions and other magnetic phases in Fe1−
x Cox Ge (x < 0.1) microplates (MPLs) newly synthesized via chemical vapor deposition are studied using both magnetic imaging and transport measurements. Lorentz transmission electron microscopy reveals a stabilized magnetic skyrmion phase near room temperature (≈280 K) and a quenched metastable skyrmion lattice via field cooling. Magnetoresistance (MR) measurements in three different configurations reveal a unique anomalous MR signal at temperatures below 200 K and two distinct field dependent magnetic transitions. The topological Hall effect (THE), known as the electronic signature of magnetic skyrmion phase, is detected for the first time in a Fe1−x Cox Ge nanostructure, with a large and positive peak THE resistivity of ≈32 nΩ cm at 260 K. This large magnitude is attributed to both nanostructuring and decreased carrier concentrations due to Co alloying of the Fe1−x Cox Ge MPL. A consistent magnetic phase diagram summarized from both the magnetic imaging and transport measurements shows that the magnetic skyrmions are stabilized in Fe1−x Cox Ge MPLs compared to bulk materials. This study lays the foundation for future skyrmion‐based nanodevices in information storage technologies.