A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/
Flexible β‐Ga 2 O 3 Nanomembrane Schottky Barrier Diodes
Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga2O3nanomembranes (NMs). In order to realize flexible high power β‐Ga2O3SBDs, sub‐micron thick freestanding β‐Ga2O3NMs are created from a bulk β‐Ga2O3substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga2O3NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga2O3SBDs exhibit the record high critical breakdown field strength (
- Award ID(s):
- 1809077
- NSF-PAR ID:
- 10462676
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 5
- Issue:
- 3
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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